Ion-Beam Sputtering Deposited Cu-Doped CdS Thin Film

Abstract:

Cu-doped CdS thin film has been successfully deposited by ion-beam sputtering deposition. The structural, morphology, optical and electrical properties of as-deposited and annealed Cu-doped CdS thin films were investigated. The heavily Cu-doped CdS films annealed at 400 °C was demonstrated to be improved in structural, morphology, electrical and optical properties. X-ray diffraction (XRD) analysis indicated the formation of polycrystalline CdS film with the structure of hexagonal wurtzite phase. No distinct impurity of Cu and Cu-S phase was detected in Cu-doped CdS thin films. Atomic force microscopy (AFM) revealed that the grain size was increased after annealed. Optical transmission and absorption spectroscopy measurement revealed a high absorption and energy band gap was of about 2.40 eV. The CdS thin film was of p-type conductivity and the resistivity was found to be 1.28×10^-1Ωcm.

• Periodical: Materials Science Forum (Volumes 743-744)
• Pages: 915-919
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.743-744.915
• Online since: January 2013
• Authors: Guang Xing Liang, Ping Fan, Peng Ju Cao, Zhuang Hao Zheng
• Keywords: CdS Thin Film, Ion Beam Sputtering, Microstructure, X-Ray Diffraction (XRD)

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