Effect of Selenium on Structure and Electrical Property for Bi0.4Sb1.6Se3xTe3(1-x) Novel Hexagonal Rods

Arej Kadhim; Arshad Hmood; Abu Hassan Haslan

doi:10.4028/www.scientific.net/MSF.756.80

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HomeMaterials Science ForumMaterials Science Forum Vol. 756Effect of Selenium on Structure and Electrical...

Effect of Selenium on Structure and Electrical Property for Bi_0.4Sb_1.6Se_3xTe_3(1-x)Novel Hexagonal Rods

Abstract:

Novel hexagonal rods of Bi0.4Sb1.6Se3xTe3(1-x) (0.0≤x≤1.0) were synthesized successfully through solid-state microwave synthesis. These hexagonal rods were explored using field emission scanning electron microscopy images. The X-ray diffraction results indicate that the powders (0.0≤x≤0.8) can be indexed as the rhombohedral phase, whereas the sample with x=1.0 has an orthorhombic phase structure. The electrical conductivity gradually decreases as Se increased, resulting in an increase in the Seebeck coefficient. Ascribing to the increased Seebeck coefficient for the sample with x=0.8, the maximum power factor is 7.47 mW/mK2 at 373 K.

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Periodical:

Materials Science Forum (Volume 756)

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80-84

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https://doi.org/10.4028/www.scientific.net/MSF.756.80

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May 2013

Authors:

Arej Kadhim, Arshad Hmood, Abu Hassan Haslan

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Crystal Structure, Defect, Electrical Properties, X-Ray Techniques

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