Preparation of ATO Thin Films from SPS-Derived Large Size ATO Ceramic Targets by PVD Methods

Fei Chen; Jun Yan Wu; Qiang Shen; Julie M. Schoenung; Lian Meng Zhang

doi:10.4028/www.scientific.net/MSF.783-786.1973

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Preparation of ATO Thin Films from SPS-Derived Large Size ATO Ceramic Targets by PVD Methods
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HomeMaterials Science ForumMaterials Science Forum Vols. 783-786Preparation of ATO Thin Films from SPS-Derived...

Preparation of ATO Thin Films from SPS-Derived Large Size ATO Ceramic Targets by PVD Methods

Abstract:

Good crystalline of ATO thin films is necessary to improve the electrical and optical properties. In this paper, ATO thin films were fabricated using PLD method at high temperature of 550 °C, and the effect of laser energy density on the microstructure, electrical property and optical property of the ATO films is discussed. The results suggest that ATO films show good crystalline when deposited at high temperature of 550 °C. Both the electrical and optical properties have been enhanced with the increasing of laser energy density. When the laser energy density is 5.4 J/cm², the lowest resistivity of ATO thin film is obtained with the value of 6.52×10^-4 Ω·cm and the average optical transmittances is 82.0 %.

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Periodical:

Materials Science Forum (Volumes 783-786)

Pages:

1973-1978

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.783-786.1973

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Online since:

May 2014

Authors:

Fei Chen*, Jun Yan Wu, Qiang Shen, Julie M. Schoenung, Lian Meng Zhang

Keywords:

Antimony Doped Tin Oxide (ATO), Magnetron Sputtering (MS), Pulsed Laser Deposition (PLD), Spark Plasma Sintering (SPS)

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References

[1] D. J. Kwark, M. W. Park, Y.M. Sung, Discharge power dependence of structural and electrical properties of Al-doped ZnO conducting film by magnetron sputtering (for PDP), Vaccum 83 (2008) 113-118.

DOI: 10.1016/j.vacuum.2008.03.099

Google Scholar

[2] Y. H. Tak, K. B. Kim, H.G. Park, Criteria for ITO (indium-tin-oxide) thin film as he bottom electrode of an organic light emitting dioxide, Thin Solid Films 411 (2002) 12-16.

DOI: 10.1016/s0040-6090(02)00165-7

Google Scholar

[3] E. Fortunato, D. Ginley, H. Hosono, Transparent conducting oxides for photovoltaics, MRS Bull 32 (2007) 242-247.

DOI: 10.1557/mrs2007.29

Google Scholar

[4] X. D. Xiao, G. P. Dong, J. D. Shao, Optical and electrical properties of SnO2: Sb thin films deposited by oblique angle deposition, Applied Surface Science 256 (2010) 1636-1640.

DOI: 10.1016/j.apsusc.2009.09.084

Google Scholar

[5] J. Montero, J. Herrero, C. Guillen, Preparation of reactively sputtered Sb-doped SnO2 thin films: Structural, electrical and optical properties, Solar Energy Materials & Solar Cells 94 (2010) 612-616.

DOI: 10.1016/j.solmat.2009.12.008

Google Scholar

[6] J. Ma, X. T. Hao, H. L. Ma, Comparison of the electrical and optical properties for SnO2: Sb films deposited on polyimide and glass substrates, Applied Surface Science 214 (2003) 208-213.

DOI: 10.1016/s0169-4332(03)00344-1

Google Scholar

[7] D. L. Zhang, L. Tao, Z. B. Deng. Surface morphologies and properties of pure and antimony-doped tin oxide films derived by sol-gel dip-coating processing, Materials Chemistry and Physics 100 (2006) 275-280.

DOI: 10.1016/j.matchemphys.2005.12.043

Google Scholar

[8] D. L. Zhang, Z. B. Deng, J. B. Zhang, Microstructure and electrical properties of antimony-doped tin oxide thin film deposited by sol-gel process, Materials Chemistry and Physics 98 (2006) 353-357.

DOI: 10.1016/j.matchemphys.2005.09.038

Google Scholar

[9] K. Y. Rajpure, M. N. Kusumade, Michael N, Neumann-Spallart. Effect of Sb doping on properties of conductive spray deposited SnO2 thin films, Materials Chemistry and Physics 64 (2000) 184-188.

DOI: 10.1016/s0254-0584(99)00256-4

Google Scholar

[10] K. Ravichandran, P. Philominathan, Fabrication of antimony doped tin oxide (ATO) films by an inexpensive, simplified spray technique using perfume atomizer, Materials Letters 62 (2008) 2980-2983.

DOI: 10.1016/j.matlet.2008.01.119

Google Scholar

[11] J. Ma, X. T. Hao, H. L. Ma, RF magnetron sputtering SnO2: Sb films deposited on organic substrates, Solid State Communication 121 (2002) 345-349.

DOI: 10.1016/s0038-1098(02)00009-1

Google Scholar

[12] Y. H. Wang, J. Ma, F. Ji, Structural and photoluminescence characters of SnO2: Sb films deposited by RF magnetron sputtering, Journal of Luminescence 114 (2005) 71-76.

DOI: 10.1016/j.jlumin.2004.12.003

Google Scholar

[13] I. Saadeddin, B. Pecquenard, J. P. Manaud, Synthesis and characterization of single- and co-doped SnO2 thin films for optoelectronic applications, Applied Surface Science 253 (2007) 5240-5249.

DOI: 10.1016/j.apsusc.2006.11.049

Google Scholar

[14] P. S. Patil, P. S. Chigare, S. B. Sadale, Thickness-dependent properties of sprayed iridium oxide thin films, Materials Chemistry and Physics 80 (2002) 667-675.

DOI: 10.1016/s0254-0584(03)00132-9

Google Scholar