Research on Surface Roughness of Acid Etched Silicon Wafers

Bai Ling You; Xue Nan Zhang; Chong Luo; Xi Kai Sun; Kai Fang Wu; Shuo Feng; Li Hua Zhang

doi:10.4028/www.scientific.net/MSF.815.14

Paper Titles

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Process Control of Buried Layer Epitaxy by Barrel Type Furnace
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Ru Thin Film Formation Using Oxygen Plasma Enhanced ALD and Rapid Thermal Processing
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Research on Surface Roughness of Acid Etched Silicon Wafers
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Ultrahigh Purity Copper Alloy Target Used Innanoscale ULSI Interconnects
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A New Type of Self-Aligned Technology for RF and Microwave Graphene Field-Effect Transistors
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HomeMaterials Science ForumMaterials Science Forum Vol. 815Research on Surface Roughness of Acid Etched...

Research on Surface Roughness of Acid Etched Silicon Wafers

Abstract:

With the development of power electronic devices, the market demand for acid etched wafers of monocrystalline silicon, which has good surface properties and minimum surface roughness, increases rapidly. But there has been rarely report about the impact of acid etching process on the wafer surface roughness. This paper studied the surface roughness of the wafer, which was etched by mixture of HNO₃, HF and HAC. The results showed that the surface roughness became smaller with the increase of wafer remove amount, while the roughness became worse with the service life extension of the acid; however, fluid infusion discharge method could be adopted in the etching process so that the etching acid system could achieve a relatively balanced state and wafer roughness became stabilized. The process mechanism was studied and analyzed in this investigation.

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Periodical:

Materials Science Forum (Volume 815)

Pages:

14-17

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.815.14

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Online since:

March 2015

Authors:

Bai Ling You, Xue Nan Zhang, Chong Luo, Xi Kai Sun, Kai Fang Wu, Shuo Feng, Li Hua Zhang

Keywords:

Acid Etched, Dynamic Balance, Monocrystalline Silicon Wafer, Surface Roughness

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