Ru Thin Film Formation Using Oxygen Plasma Enhanced ALD and Rapid Thermal Processing

Abstract:

A novel Ru thin film formation method was proposed to deposit metallic Ru thin films on TiN substrate for future backend of line process in semiconductor technologies. RuO₂ thin films were first grown on TiN substrate by oxygen plasma-enhanced atomic layer deposition technique. The deposited RuO₂ thin films were then reduced into metallic Ru thin films by H₂/N₂-assisted annealing.

• Periodical: Materials Science Forum (Volume 815)
• Pages: 8-13
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.815.8
• Online since: March 2015
• Authors: Chun Min Zhang, Xiao Yong Liu, Lin Qing Zhang, Hong Liang Lu, Peng Fei Wang*, Wei Zhang
• Keywords: Atomic Layer Deposition, Oxygen Plasma, Ruthenium, TiN

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