Process Control of Buried Layer Epitaxy by Barrel Type Furnace

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Abstract:

Though the quality of epitaxial wafer prepared by barrel type epitaxial furnace is inferior to that by traditional single wafer furnace, it has a series of advantages such as high yield and low cost. The key issues and difficulties of the epitaxy process for buried layers IC wafers prepared by barrel type epitaxial furnace were discussed. By optimizing the epitaxy process parameters and tightly controlling the production procedure such as cleaning and inspecting, barrel type epitaxial furnace can meet the special requirement for buried layer epitaxial process. The characteristics of the epilayers prepared by barrel type epitaxial furnace were close or equivalent to that by single wafer furnace. The ways to suppress the auto doping in the double buried layer epitaxial process were introduced. The ideal transition width of the epilayers was obtained by the two-step epitaxy.

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3-7

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March 2015

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© 2015 Trans Tech Publications Ltd. All Rights Reserved

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[1] Zhao Lixia, Zhang Heming, Research on Pattern Shift in Si Epitaxial Process, Micronanoelctronic technology, 46 (2009)691-694.

Google Scholar

[2] Yi Guicheng, the Measurement of Pattern Shift in Buried Layer during Epitaxial Deposition, Microelectronics and Computers 6(1989)35-36.

Google Scholar

[3] Li Yangxian, Ju Yulin, Effects of Orientation Deviation on Pattern Distortion in Epitaxial Buried Layer on P <100> Si Substrate, Chinese Journal of Semiconductors 17(1996)241-245.

Google Scholar

[4] Xi Kuide, Effects of B Auto doping in PN isolation, Semiconductor and Technology 3(1986)9-12.

Google Scholar