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Simulations of a Lateral PiN Diode on Si/SiC Substrate for High Temperature Applications

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Abstract:

Simulations are presented of a lateral PiN power diode on a Si/SiC substrate for harsh environment, high temperature applications. Thermal simulations compare the Si/SiC solution to SOI, Si/SiO2/SiC, bulk Si and SiC, showing that the Si/SiC architecture, with its thin Si film intimately formed on SiC, displays significant thermal advantages over any other Si solution, and is comparable to bulk SiC. Detailed electrical simulations show that in comparison to the same device in SOI, a Si/SiC PiN diode offers no deterioration of the on-state performance, improved self-heating effects at increased current and can potentially support higher breakdown voltages.

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Periodical:

Materials Science Forum (Volumes 821-823)

Pages:

624-627

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.821-823.624

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Online since:

June 2015

Authors:

Chun W. Chan*, Peter Michael Gammon, Vishal Ajit Shah, Han Chen, Michael R. Jennings, C.A. Fisher, A. Pérez-Tomás, Maksym Myronov, P.A. Mawby

Keywords:

High Temperature, PiN Diode, Si/SiC Substrate

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© 2015 Trans Tech Publications Ltd. All Rights Reserved

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