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HomeMaterials Science ForumMaterials Science Forum Vols. 83-87

Materials Science Forum Vols. 83-87

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.83-87

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Localized Vibrational Mode Absorption of Silicon Donors and Beryllium Acceptors in MBE GaAs, InAs and InSb

Authors: R. Addinall, R.C. Newman, Ian T. Ferguson, A. Mohades-Kassai, M.R. Brozel, V.K.M. Sharma, D. McPhail, M.J.L. Sangster

1027

Low Temperature GaAs: Electrical and Optical Properties

Authors: Maria Kaminska, Eicke R. Weber

1033

Influence of Growth Rate and Temperature on the Structure of Low Temperature GaAs

Authors: Zuzanna Liliental-Weber, A. Claverie, P. Werner, W. Schaff, Eicke R. Weber

1045

Electron Paramagnetic Resonance Studies of Low Temperature Molecular Beam Epitaxial GaAs Layers

Authors: Hans Jürgen von Bardeleben, Y.Q Jia, M.O. Manasreh, K.R. Evans, C.E. Stutz

1051

Effect of Low Temperature Growth on Impurity and Defect Incorporation in AlGaAs Grown by Mombe

Authors: C.R. Abernathy, Stephen J. Pearton, D.A. Bohling

1057

Characterization of GaAs/AlGaAs Heterostructures Grown by OMVPE Using Trimethylamine Alane as a New Aluminum Source

Authors: W.S. Hobson, S.R. McAfee, Kevin S. Jones, N.G. Paroskevopoulos, C.R. Abernathy, S.K. Sputz, T.D. Harris, M. Lamont Schnoes, Stephen J. Pearton

1063

Oxygen Behavior during Silicon Epitaxial Growth: Recent Advances

Authors: B. Pivac, A. Borghesi, M. Geddo, A. Sassella, A. Stella

1069

Defects in MCZ Silicon with Various Oxygen and Carbon Contents

Authors: E.P. Bochkarev, S.N. Gorin, G.N. Petrov, T.M. Tkacheva

1075

Atomic Defect Configurations Identified by Nuclear Techniques

Authors: Th. Wichert

1081

Combination of Deep Level Transient Spectroscopy and Transmutation of Radioactive Impurities

Authors: Gerhard Pensl, M. Lang, M. Gebhard, N. Achtziger, M. Uhrmacher

1097