Materials Science Forum Vols. 83-87

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https://doi.org/10.4028/www.scientific.net/MSF.83-87

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Paper Title Page

Generation of Anion-Antisite Defects in n-Type, p-Type and Semi-Insulating InP Studied by MCD-ODMR and MCD-ODENDOR

Authors: H.P. Gislason, H. Sun, R.E. Peale, G.D. Watkins

905

Energy Levels Associated with the Metastable State of EL2

Authors: Didier Stiévenard, Christian Delerue, G. Brémond, Gérard Guillot, R. Azoulay, Hans Jürgen von Bardeleben, J.C. Bourgoin, Jean Claude Portal, E. Ranz

911

Re-Examination of the Configuration Coordinate Diagram of EL2

Authors: D. Goguenheim, Didier Stiévenard, Gérard Guillot

917

Vacancy in the Metastable State of the EL2 Defect in GaAs

Authors: Pekka J. Hautojärvi, Kimmo Saarinen, L. Liszkay, C. Corbel, C. LeBerre

923

First-Principles Calculations of the Pressure Dependence of EL2 in its Stable State

Authors: C. Ziegler, Udo Scherz

929

Opticallly Detected Electron-Nuclear Double Resonance of the M_s=0 State of a P_Ga-Y_PSpin-Triplet Center in GaP

Authors: Hong-Jiang Sun, F. Christopher Rong, D. Watkins

935

Electrical Activity and Diffusion of Shallow Acceptors in III-V Semiconductors

Authors: W. Walukiewicz, Kin Man Yu, L.Y. Chan, J. Jaklevic, Eugene E. Haller

941

Point Defects and their Reactions in Semiinsulating GaAs after Low Temperature e^--Irradiation

Authors: A. Pillukat, Peter Ehrhart

947

Photoluminescence Related to Si_Ga-Si_As Pairs in GaAs

Authors: Masashi Suezawa, Koichi Kasuya, Y. Nishina, Koji Sumino

953

EPR Observation of a Deep Center with A p¹ Electron Configuration in GaAs

Authors: Ulrich Kaufmann, M. Baeumler, G. Hendorfer

959