Paper Titles

Characterization of GaAs/AlGaAs Heterostructures Grown by OMVPE Using Trimethylamine Alane as a New Aluminum Source
p.1063

Oxygen Behavior during Silicon Epitaxial Growth: Recent Advances
p.1069

Defects in MCZ Silicon with Various Oxygen and Carbon Contents
p.1075

Atomic Defect Configurations Identified by Nuclear Techniques
p.1081

Combination of Deep Level Transient Spectroscopy and Transmutation of Radioactive Impurities
p.1097

Identification of Band Gap States in Silicon by Deep Level Transient Spectroscopy on Radioactive Impurities
p.1103

Microscopy of Frenkel Pairs in Semiconductors by Nuclear Techniques
p.1109

Modern Muon Spectroscopic Methods in Semiconductor Physics
p.1115

Muon Stopping Sites in Semiconductors from Decay-Positron Channeling
p.1121

HomeMaterials Science ForumMaterials Science Forum Vols. 83-87Combination of Deep Level Transient Spectroscopy...

Combination of Deep Level Transient Spectroscopy and Transmutation of Radioactive Impurities

Article Preview

Abstract:

You might also be interested in these eBooks

Defects in Semiconductors 16

Info:

Periodical:

Materials Science Forum (Volumes 83-87)

Pages:

1097-1102

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.83-87.1097

Citation:

Cite this paper

Online since:

January 1992

Authors:

Gerhard Pensl, M. Lang, M. Gebhard, N. Achtziger, M. Uhrmacher

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1992 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: