Preface, Committees, Sponsors
Bulk Growth of Large Area SiC Crystals
p.5
p.5
Large Area 4H SiC Products for Power Electronic Devices
p.11
p.11
Using Ray Tracing Simulations for Direct Determination of Burgers Vectors of Threading Mixed Dislocations in 4H-SiC c-Plane Wafers Grown by PVT Method
p.15
p.15
Trials of Solution Growth of Dislocation-Free 4H-SiC Bulk Crystals
p.19
p.19
Developing Technologies of SiC Gas Source Growth Method
p.23
p.23
Limitations in Very Fast Growth of 4H-SiC Crystals by High-Temperature Gas Source Method
p.29
p.29
High Temperature Solution Growth of SiC by the Vertical Bridgman Method Using a Metal Free Si-C-Melt at 2300 °C
p.33
p.33
Effect of Aluminum during the High Temperature Solution Growth of Si-Face 4H-SiC
p.37
p.37
Preface, Committees, Sponsors
Abstract:
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Info:
Periodical:
Materials Science Forum (Volume 858)
Online since:
May 2016
Сopyright:
© 2016 Trans Tech Publications Ltd. All Rights Reserved
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