Paper Titles
Preface, Committees, Sponsors
Bulk Growth of Large Area SiC Crystals
p.5
Large Area 4H SiC Products for Power Electronic Devices
p.11
Using Ray Tracing Simulations for Direct Determination of Burgers Vectors of Threading Mixed Dislocations in 4H-SiC c-Plane Wafers Grown by PVT Method
p.15
Trials of Solution Growth of Dislocation-Free 4H-SiC Bulk Crystals
p.19
Developing Technologies of SiC Gas Source Growth Method
p.23
Limitations in Very Fast Growth of 4H-SiC Crystals by High-Temperature Gas Source Method
p.29
High Temperature Solution Growth of SiC by the Vertical Bridgman Method Using a Metal Free Si-C-Melt at 2300 °C
p.33
Effect of Aluminum during the High Temperature Solution Growth of Si-Face 4H-SiC
p.37

Large Area 4H SiC Products for Power Electronic Devices

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Abstract:

Efforts to develop 150 mm 4H SiC bare wafer and epitaxial substrates for power electronic device applications have resulted in quality improvements, such that key metrics match or outperform 100 mm substrates. Total dislocation densities and threading screw dislocation densities measured for 150 mm wafers were ~4100 cm-2 and ~100 cm-2, respectively, compared with values of ~5900 cm-2 and ~300 cm-2 measured for 100 mm wafers. While median basal plane dislocation counts in 150 mm samples exceed those of the smaller platform, a nearly 45% reduction was realized, resulting in a median density of ~3900 cm-2. Epilayers grown on 150 mm substrates likewise exhibit quality metrics that are comparable to 100 mm samples, with median thickness and doping sigma/mean values of 1.1% and 4.4%, respectively.

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Periodical:

Materials Science Forum (Volume 858)

Pages:

11-14

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.858.11

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Online since:

May 2016

Authors:

Ian Manning*, Jie Zhang, Bernd Thomas, Edward Sanchez, Darren Hansen, Daniel Adams, Gil Yong Chung, Kevin Moeggenborg, Christopher Parfeniuk, Jeffrey Quast, Victor Torres, Clinton Whiteley

Keywords:

150 Mm, 4H Silicon Carbide, Bulk Crystal Growth, Homoepitaxy, Power Electronics, Threading Dislocations (TD)

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© 2016 Trans Tech Publications Ltd. All Rights Reserved

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