Large Area Silicon Carbide Photodiode, and Monolithic Readout Design and Fabrication

Akin Akturk; Brendan Cusack; Neil Goldsman

doi:10.4028/www.scientific.net/MSF.858.1023

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HomeMaterials Science ForumMaterials Science Forum Vol. 858Large Area Silicon Carbide Photodiode, and...

Large Area Silicon Carbide Photodiode, and Monolithic Readout Design and Fabrication

Abstract:

We are in the process of designing and fabricating a very large area (> 4mm²) and extremely low dark current silicon carbide ultraviolet photodiode with a readout circuitry monolithically fabricated on the same die. This is a large area silicon carbide based active pixel sensor (APS), capable of measuring low power density deep ultraviolet photons as well as low energy particles. To this end, we have already fabricated several large area photodiodes with low dark current values and large ultraviolet responsivities. We here report the electrical and optical measured performance of various size photodiodes we have fabricated.

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Periodical:

Materials Science Forum (Volume 858)

Pages:

1023-1027

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.858.1023

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Online since:

May 2016

Authors:

Akin Akturk*, Brendan Cusack, Neil Goldsman

Keywords:

Avalanche Photodiode, Silicon Carbide Fabrication, Silicon Carbide Photodiode, Ultraviolet Sensor

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References

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