Ion Implanted 4H-SiC UV Pin-Diodes for Solar Radiation Detection – Simulation and Characterization

C.D. Matthus; Tobias Erlbacher; Alexander Burenkov; Anton J. Bauer; Lothar Frey

doi:10.4028/www.scientific.net/MSF.858.1032

Paper Titles

Ni₂Si/4H-SiC Schottky Photodiodes for Ultraviolet Light Detection
p.1015

Large Area Visible Blind 4H-SiC p+/N UV Photodiode Obtained by Aluminium Implantation
p.1019

Large Area Silicon Carbide Photodiode, and Monolithic Readout Design and Fabrication
p.1023

Solar Driven Energy Conversion Applications Based on 3C-SiC
p.1028

Ion Implanted 4H-SiC UV Pin-Diodes for Solar Radiation Detection – Simulation and Characterization
p.1032

Structural Optimization of 4H-SiC BJT for Ultraviolet Detection with High Optical Gain
p.1036

History and Recent Developments of Packaging Technology for SiC Power Devices
p.1043

Reliability Evaluation of SiC Power Device Package Used Heat-Resistant Molding Plastic by Power Cycle Test
p.1049

Studies on Floating Contact Press-Pack Diodes Surge Current Capability
p.1053

HomeMaterials Science ForumMaterials Science Forum Vol. 858Ion Implanted 4H-SiC UV Pin-Diodes for Solar...

Ion Implanted 4H-SiC UV Pin-Diodes for Solar Radiation Detection – Simulation and Characterization

Abstract:

This paper describes the fabrication, characterization, and simulation of 4H-SiC pin-photodiodes for solar UV radiation detection. The devices were produced with an aluminum implanted emitter unlike most previously published detectors which use epitaxy for all applied doping regions (see e.g. [1-3]). They were electrically characterized at different temperatures with and without UV-illumination and afterwards a spectral analysis of the photocurrent was performed. A quantum efficiency up to 55% at 260 nm will be shown. Furthermore, the capability of the diodes for visible blind sun UV monitoring e.g. within a building, is demonstrated.