Structural Optimization of 4H-SiC BJT for Ultraviolet Detection with High Optical Gain

Yun Bai; Chengzhan Li; Hua Jun Shen; Yi Dan Tang; Xin Yu Liu

doi:10.4028/www.scientific.net/MSF.858.1036

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Large Area Visible Blind 4H-SiC p+/N UV Photodiode Obtained by Aluminium Implantation
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Ion Implanted 4H-SiC UV Pin-Diodes for Solar Radiation Detection – Simulation and Characterization
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Structural Optimization of 4H-SiC BJT for Ultraviolet Detection with High Optical Gain
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History and Recent Developments of Packaging Technology for SiC Power Devices
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Reliability Evaluation of SiC Power Device Package Used Heat-Resistant Molding Plastic by Power Cycle Test
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Studies on Floating Contact Press-Pack Diodes Surge Current Capability
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Impact of Package Parasitics on Switching Performance
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HomeMaterials Science ForumMaterials Science Forum Vol. 858Structural Optimization of 4H-SiC BJT for...

Structural Optimization of 4H-SiC BJT for Ultraviolet Detection with High Optical Gain

Abstract:

The 4H-SiC n-p-n BJT for ultraviolet detection with high optical gain is proposed and optimized in this paper. The effect of structural parameters of 4H-SiC phototransistor on the performance of the detectors is simulated and the effect mechanism is analyzed. The simulation results show that the 4H-SiC phototransistors detect UV light with a response wavelength below 380 nm. It is suggested that the base parameters are important to the responsivity of the 4H-SiC BJT. With optimized parameters the 4H-SiC UV phototransistor exhibits peak responsivity as high as 4617 A/W corresponding to a quantum gain of 2.2×10⁵ under the bias voltage of 5 V.

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Silicon Carbide and Related Materials 2015

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Periodical:

Materials Science Forum (Volume 858)

Pages:

1036-1039

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.858.1036

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Online since:

May 2016

Authors:

Yun Bai*, Chengzhan Li, Hua Jun Shen, Yi Dan Tang, Xin Yu Liu

Keywords:

Bipolar Junction Transistor (BJT), Phototransistor, Silicon Carbide (SiC), Ultraviolet Detection

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References

[1] S. Soloviev, A. Vert, J. Fronheiser, P. Sandvik, Solar-Blind 4H-SiC Avalanche photodiodes, Mater. Sci. Forum, 615-617 (2009) 873-876.

DOI: 10.4028/www.scientific.net/msf.615-617.873

Google Scholar

[2] H. Zhu, X. Chen, J. Cai, Z. Wu, 4H-SiC ultraviolet avalanche photodetectors with low breakdown voltage and high gain, Solid-State Electronics, 53 (2009) 7-10.

DOI: 10.1016/j.sse.2008.09.002

Google Scholar

[3] Atlas User's Manual, Silvaco, Inc., may, (2013).

Google Scholar

[4] S. G. Sridhara, R. P. Devaty and W. J. Choyke, Absorption coefficient of 4H silicon carbide from 3900 to 3250 Å J. Appl. Phys. 84 (1998) 2963-2964.

DOI: 10.1063/1.368403

Google Scholar

[5] Y. Negoro, T. Kimoto, H. Matsunami, F. Schmid, G. Pensl, Electrical activation of high-concentration aluminum implanted in 4H-SiC, J. Appl. Phys. 96 (2004) 4916-4922.

DOI: 10.1063/1.1796518

Google Scholar