Impact of Package Parasitics on Switching Performance

Konstantin Kostov; Jang Kwon Lim; Ya Fan Zhang; Mietek Bakowski

doi:10.4028/www.scientific.net/MSF.858.1057

Paper Titles

Structural Optimization of 4H-SiC BJT for Ultraviolet Detection with High Optical Gain
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History and Recent Developments of Packaging Technology for SiC Power Devices
p.1043

Reliability Evaluation of SiC Power Device Package Used Heat-Resistant Molding Plastic by Power Cycle Test
p.1049

Studies on Floating Contact Press-Pack Diodes Surge Current Capability
p.1053

Impact of Package Parasitics on Switching Performance
p.1057

Investigation of Pressure Dependent Thermal Contact Resistance between Silver Metallized SiC Chip and Molybdenum Substrate and between Molybdenum Substrate and Bulk Copper
p.1061

Development of a Wire-Bonding-Less SiC Power Module Operating over a Wide Temperature Range
p.1066

SPICE Modeling of Advanced Silicon Carbide High Temperature Integrated Circuits
p.1070

Development of a PSpice Model for SiC MOSFET Power Modules
p.1074

HomeMaterials Science ForumMaterials Science Forum Vol. 858Impact of Package Parasitics on Switching...

Impact of Package Parasitics on Switching Performance

Abstract:

The package parasitics are a serious obstacle to the high-speed switching, which is necessary in order to reduce the switching power losses or reduce the size of power converters. In order to design new packages suitable for Silicon Carbide (SiC) power transistors, it is necessary to extract the parasitics of different packages and be able to predict the switching performance of the power devices placed in these packages. This paper presents two ways of simulating the switching performance in a half-bridge power module with SiC MOSFETs. The results show that the parasitic inductances in the power module slow down the switching, lead to poor current sharing, and together with the parasitic capacitances lead to oscillations. These negative effects can cause failures, increased losses, and electromagnetic compatibility issues.

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Silicon Carbide and Related Materials 2015

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Periodical:

Materials Science Forum (Volume 858)

Pages:

1057-1060

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.858.1057

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Online since:

May 2016

Authors:

Konstantin Kostov*, Jang Kwon Lim, Ya Fan Zhang, Mietek Bakowski

Keywords:

Module, MOSFET, Parasitic, Parasitic Inductance, Silicon Carbide (SiC), Switching

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References

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