Development of a Wire-Bonding-Less SiC Power Module Operating over a Wide Temperature Range

Abstract:

In this paper, we describe a power module fabricated using SiC metal–oxide–semiconductor field-effect transistors (MOSFETs). A C-R snubber is integrated into this power module for reduction of the surge voltage and dumping of the voltage ringing. The four SiC MOSFETs are sandwiched between active metal copper (AMC) substrates. The surfaces of the SiC MOSFETs are attached to AMC substrates by Al bumps, owing to which the power module shows low inductance. Moreover, this power module ensures credibility and reliability at higher operating temperatures beyond 200 °C. The switching characteristics of the module are studied experimentally for high-temperature and high-frequency operations.

• Periodical: Materials Science Forum (Volume 858)
• Pages: 1066-1069
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.858.1066
• Online since: May 2016
• Authors: Shinya Sato*, Hidekazu Tanisawa, Takeshi Anzai, Hiroki Takahashi, Yoshinori Murakami, Fumiki Kato, Kinuyo Watanabe, Hiroshi Sato
• Keywords: Al-Bumps, High-Temperature Operation, Power Module, SiC-MOSFET

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