SPICE Modeling of Advanced Silicon Carbide High Temperature Integrated Circuits

Abstract:

Due to the wide band-gap and high thermal conductivity of the 4H polytype of silicon carbide (SiC) as well as the maturity of this polytype’s fabrication processes, 4H-SiC offers an extremely attractive wide bandgap semiconductor technology for harsh environment applications spanning a variety of markets. To this end, 4H-SiC power electronics is gradually emerging as the technology of choice for next-generation power electronics; however, relatively limited progress has been made with regards to silicon carbide integrated circuits (ICs). We address this problem by developing fabrication and design methods for the SiC IC components themselves, as well as complementary SPICE type compact models for these components, and thereby facilitate the development of future SiC ICs and Process Design Kits (PDKs).

• Periodical: Materials Science Forum (Volume 858)
• Pages: 1070-1073
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.858.1070
• Online since: May 2016
• Authors: Akin Akturk*, Neil Goldsman, Ahayi Ahyi, Sarit Dhar, Brendan Cusack, Minseo Park
• Keywords: Silicon Carbide Circuit Fabrication, Silicon Carbide Integrated Circuit, Silicon Carbide SPICE Models

References

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