Studies on Floating Contact Press-Pack Diodes Surge Current Capability

Viorel Banu; Maxime Berthou; Josep Montserrat; X. Jordà; José Millan; Philippe Godignon

doi:10.4028/www.scientific.net/MSF.858.1053

Paper Titles

Ion Implanted 4H-SiC UV Pin-Diodes for Solar Radiation Detection – Simulation and Characterization
p.1032

Structural Optimization of 4H-SiC BJT for Ultraviolet Detection with High Optical Gain
p.1036

History and Recent Developments of Packaging Technology for SiC Power Devices
p.1043

Reliability Evaluation of SiC Power Device Package Used Heat-Resistant Molding Plastic by Power Cycle Test
p.1049

Studies on Floating Contact Press-Pack Diodes Surge Current Capability
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Impact of Package Parasitics on Switching Performance
p.1057

Investigation of Pressure Dependent Thermal Contact Resistance between Silver Metallized SiC Chip and Molybdenum Substrate and between Molybdenum Substrate and Bulk Copper
p.1061

Development of a Wire-Bonding-Less SiC Power Module Operating over a Wide Temperature Range
p.1066

SPICE Modeling of Advanced Silicon Carbide High Temperature Integrated Circuits
p.1070

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Studies on Floating Contact Press-Pack Diodes Surge Current Capability

Abstract:

This work reports experimental results on surge current capability of press-pack SiC diodes: Schottky, JBS and PIN. Our investigation showed a strong improvement of electro-thermal performances of the surge current capability for the 5.5 kV JBS diodes by using press-pack encapsulation. The surge current failure analysis for the press-pack SiC diodes is described together with a simplified unidimensional model for the temperature evaluation at the failure point.