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The Interaction between Graphene and the SiC Substrate: Ab Initio Calculations for Polar and Nonpolar Surfaces
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Wafer-Scale Graphene on 4-Inch SiC
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Hot Electron Transistors Based on Graphene/AlGaN/GaN Vertical Heterostructures
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Amplification in Graphene Nanoribbon Junctions
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Modified Epitaxial Graphene on SiC for Extremely Sensitive and Selective Gas Sensors
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Abnormal Raman Spectral Variation with Excitation Wavelength in Boron-Doped Single-Crystalline Diamond
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HomeMaterials Science ForumMaterials Science Forum Vol. 858Amplification in Graphene Nanoribbon Junctions

Amplification in Graphene Nanoribbon Junctions

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Abstract:

All carbon three terminal junctions were fabricated from epitaxial graphene grown on semiinsulating Si-face 4H-SiC. It is demonstrated that self-contained gate devices exhibit current modulation characteristics. The obtained current gain depends on the device design and is controlled by the applied gate voltage.

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Silicon Carbide and Related Materials 2015

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Periodical:

Materials Science Forum (Volume 858)

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1141-1144

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.858.1141

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Online since:

May 2016

Authors:

Joerg Pezoldt*, Bernd Hähnlein, Heiko O. Jacobs, Frank Schwierz

Keywords:

Current Amplification, Graphene, Nanoribbon, Three Terminal Junction

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© 2016 Trans Tech Publications Ltd. All Rights Reserved

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