Graphene-Silicon Heterojunction Infrared Photodiode at 1.3/1.55 μm

Tzu Min Ou; Tomoko Borsa; Bart J. Van Zeghbroeck

doi:10.4028/www.scientific.net/MSF.858.1153

Paper Titles

Hot Electron Transistors Based on Graphene/AlGaN/GaN Vertical Heterostructures
p.1137

Amplification in Graphene Nanoribbon Junctions
p.1141

Modified Epitaxial Graphene on SiC for Extremely Sensitive and Selective Gas Sensors
p.1145

Highly Sensitive NO₂ Graphene Sensor Made on SiC Grown in Ta Crucible
p.1149

Graphene-Silicon Heterojunction Infrared Photodiode at 1.3/1.55 μm
p.1153

Abnormal Raman Spectral Variation with Excitation Wavelength in Boron-Doped Single-Crystalline Diamond
p.1158

Development of GaN-Based Gate-Injection Transistors and its Power Switching Application
p.1165

Metal/P-GaN Contacts on AlGaN/GaN Heterostructures for Normally-Off HEMTs
p.1170

Tri-Gate Al_0.2Ga_0.8N/AlN/GaN HEMTs on SiC/Si-Substrates
p.1174

HomeMaterials Science ForumMaterials Science Forum Vol. 858Graphene-Silicon Heterojunction Infrared...

Graphene-Silicon Heterojunction Infrared Photodiode at 1.3/1.55 μm

Abstract:

A novel infrared photodiode based on a graphene/n-type silicon heterojunction is explored. The heterojunction photodiode of interest has a large Schottky barrier that results in a low dark current. Graphene serves as the absorbing medium at a wavelength for which silicon is transparent. Under infrared illumination, photo-excited electrons in the graphene gain energy and thus have a greater probability to overcome the barrier and contribute to the photocurrent. We have demonstrated photodiode operation of a graphene/n-Si heterojunction at 1.3 and 1.55 μm wavelength, with 14% internal quantum efficiency and 1.5 pW/Hz^1/2 noise-equivalent power, for potential use in silicon photonics.

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Periodical:

Materials Science Forum (Volume 858)

Pages:

1153-1157

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.858.1153

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Online since:

May 2016

Authors:

Tzu Min Ou*, Tomoko Borsa, Bart J. Van Zeghbroeck

Keywords:

Graphene, Heterojunction, Infrared, Photodiode, Photonics, Silicon

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