Highly Sensitive NO2 Graphene Sensor Made on SiC Grown in Ta Crucible

S. Novikov; Yuri Makarov; Heikki Helava; S. Lebedev; Andrey Lebedev; Valeri Davydov

doi:10.4028/www.scientific.net/MSF.858.1149

Paper Titles

Wafer-Scale Graphene on 4-Inch SiC
p.1133

Hot Electron Transistors Based on Graphene/AlGaN/GaN Vertical Heterostructures
p.1137

Amplification in Graphene Nanoribbon Junctions
p.1141

Modified Epitaxial Graphene on SiC for Extremely Sensitive and Selective Gas Sensors
p.1145

Highly Sensitive NO₂ Graphene Sensor Made on SiC Grown in Ta Crucible
p.1149

Graphene-Silicon Heterojunction Infrared Photodiode at 1.3/1.55 μm
p.1153

Abnormal Raman Spectral Variation with Excitation Wavelength in Boron-Doped Single-Crystalline Diamond
p.1158

Development of GaN-Based Gate-Injection Transistors and its Power Switching Application
p.1165

Metal/P-GaN Contacts on AlGaN/GaN Heterostructures for Normally-Off HEMTs
p.1170

HomeMaterials Science ForumMaterials Science Forum Vol. 858Highly Sensitive NO2 Graphene Sensor Made on SiC...

Highly Sensitive NO₂ Graphene Sensor Made on SiC Grown in Ta Crucible

Abstract:

Graphene films were grown on SiC substrates by annealing in vacuum or in Ar flow. Gas sensors based on graphene films were made and tested on response to nitrogen dioxide. Graphene film is used in the sensor. The graphene film grown by annealing in Ar flow shows superior sensitivity compared to that annealed in vacuum. Both sensors exhibit good potential for environmental research and monitoring

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Materials Science Forum (Volume 858)

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1149-1152

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.858.1149

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Online since:

May 2016

Authors:

S. Novikov, Yuri Makarov*, Heikki Helava, S. Lebedev, Andrey Lebedev, Valeri Davydov

Keywords:

Graphene, Nitrogen Dioxide, Silicon Carbide (SiC)

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References

[1] T. Becker, S. Muhlberger, C. Braunmuhl, G. Muller, T. Ziemann, K.V. Hechtenberg, Air pollution monitoring using tin-oxide-based microreactor systems, Sens. Actuators B69, p.108–119, (2000).

DOI: 10.1016/s0925-4005(00)00516-5

Google Scholar

[2] R. Pearce, T. Iakimov, M. Anderson, L. Hultman, A. Lloid Spetz, R. Yakimova, Epitaxially grown graphene based gas sensors for ultra sensitive NO2 detection, Sensors and Actuators B 155, p.451–455, (2011).

DOI: 10.1016/j.snb.2010.12.046

Google Scholar

[3] D. S. Lee, C. Riedl, B. Krauss, K. von Klitzing, U. Starke, and J. H. Smet, Raman Spectra of Epitaxial Graphene on SiC and of Epitaxial Graphene Transferred to SiO2, Nano Letters, 8 No. 12 4320-4325, (2008).

DOI: 10.1021/nl802156w

Google Scholar

[4] C. -C. Kalmbach, J. Schurr, F. J. Ahlers, A. Müller, S. Novikov, N. Lebedeva and A. Satrapinski Towards a graphene-based quantum impedance standard , Appl. Phys. Lett., 073511, (2014).

DOI: 10.1063/1.4893940

Google Scholar

[5] S. Novikov, N. Lebedeva, and A. Satrapinski, Journal of Sensors, Ultra-sensitive NO2 gas sensor based on epitaxial graphene, vol. 2015, Article ID 108581, 7 pages, 2015. doi: 10. 1155/2015/108581.

DOI: 10.1155/2015/108581

Google Scholar