Wafer-Scale Graphene on 4-Inch SiC

Wan Cheng Yu; Xiu Fang Chen; Xiao Bo Hu; Xian Gang Xu

doi:10.4028/www.scientific.net/MSF.858.1133

Paper Titles

Evidence of Processing Non-Idealities in 4H-SiC Integrated Circuits Fabricated with Two Levels of Metal Interconnect
p.1112

Atomistic Simulations and Interfacial Morphology of Graphene Grown on SiC(0001) and SiC(000-1) Substrates
p.1121

The Interaction between Graphene and the SiC Substrate: Ab Initio Calculations for Polar and Nonpolar Surfaces
p.1125

Interfacial Disorder of Graphene Grown at High Temperatures on 4H-SiC(000-1)
p.1129

Wafer-Scale Graphene on 4-Inch SiC
p.1133

Hot Electron Transistors Based on Graphene/AlGaN/GaN Vertical Heterostructures
p.1137

Amplification in Graphene Nanoribbon Junctions
p.1141

Modified Epitaxial Graphene on SiC for Extremely Sensitive and Selective Gas Sensors
p.1145

Highly Sensitive NO₂ Graphene Sensor Made on SiC Grown in Ta Crucible
p.1149

HomeMaterials Science ForumMaterials Science Forum Vol. 858Wafer-Scale Graphene on 4-Inch SiC

Wafer-Scale Graphene on 4-Inch SiC

Abstract:

Wafer-scale graphene on SiC with uniform structural features was grown on semi-insulating 4 inch on-axis 4H-SiC (0001) face. Growth was carried out in a conventional physical vapor transport (PVT) growth system. Atmospheric pressure graphitization and a “face-down” orientation were account for the high uniformity of graphene. Atomic force microscopy, electrostatic force microscopy and Raman spectroscopy were used to confirm the uniformity of surface morphology and layer number. Electrical properties were also characterized by Hall measurements on 15×15mm² samples sawed from the wafer. An average Hall mobility of about 2000cm²/Vs was obtained.

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Periodical:

Materials Science Forum (Volume 858)

Pages:

1133-1136

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.858.1133

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Online since:

May 2016

Authors:

Wan Cheng Yu, Xiu Fang Chen*, Xiao Bo Hu, Xian Gang Xu

Keywords:

Epitaxial Graphene, High Mobility, Silicon Carbide (SiC), Wafer-Scale

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