Development of GaN-Based Gate-Injection Transistors and its Power Switching Application

Tatsuo Morita; Tetsuzo Ueda

doi:10.4028/www.scientific.net/MSF.858.1165

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HomeMaterials Science ForumMaterials Science Forum Vol. 858Development of GaN-Based Gate-Injection...

Development of GaN-Based Gate-Injection Transistors and its Power Switching Application

Abstract:

This paper reviews the state-of-the-art technologies of the normally-off GaN Gate Injection Transistor (GIT) and its applications such as inverter for motor drive and Power Factor Collection (PFC). Fundamental performances such as the current-collapse-free operation and the excellent switching performance are reviewed.

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Materials Science Forum (Volume 858)

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1165-1169

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.858.1165

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Online since:

May 2016

Authors:

Tatsuo Morita, Tetsuzo Ueda

Keywords:

Current Collapse, GaN, GIT, Normally-Off, Transistor

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