Visualization of Polarization and Two Dimensional Electron Gas Distribution in AlGaN/GaN Heterostructure Using Scanning Nonlinear Dielectric Microscopy

Kotaro Hirose; Norimichi Chinone; Yasuo Cho

doi:10.4028/www.scientific.net/MSF.858.1182

Paper Titles

Development of GaN-Based Gate-Injection Transistors and its Power Switching Application
p.1165

Metal/P-GaN Contacts on AlGaN/GaN Heterostructures for Normally-Off HEMTs
p.1170

Tri-Gate Al_0.2Ga_0.8N/AlN/GaN HEMTs on SiC/Si-Substrates
p.1174

Trapping States in SiO₂/GaN MOS Capacitors Fabricated on Recessed AlGaN/GaN Heterostructures
p.1178

Visualization of Polarization and Two Dimensional Electron Gas Distribution in AlGaN/GaN Heterostructure Using Scanning Nonlinear Dielectric Microscopy
p.1182

15 eV Protons Irradiation of the GaN Schottky Diodes
p.1186

Study and Optimization of a 600V Pseudo-Vertical GaN-on-Silicon Rectifier by Finite Element Simulations
p.1190

Growth of Crack-Free GaN on Si HEMTs with Fe-Doped GaN Using Un-Doped GaN Interlayer
p.1194

HVPE GaN Growth on 4H SiC and Die Dicing
p.1198

HomeMaterials Science ForumMaterials Science Forum Vol. 858Visualization of Polarization and Two Dimensional...

Visualization of Polarization and Two Dimensional Electron Gas Distribution in AlGaN/GaN Heterostructure Using Scanning Nonlinear Dielectric Microscopy

Abstract:

AlGaN/GaN heterostructure was observed using scanning nonlinear dielectric microscopy, which can measure both carrier and polarization profile in AlGaN/GaN heterostructure. As a result, GaN spontaneous polarization and AlGaN polarization which was sum of spontaneous polarization and piezoelectric polarization were clearly distinguished. Moreover, two dimensional electron gas was observed at the AlGaN/GaN interface. These results show that scanning nonlinear dielectric microscopy is useful method for evaluation of two dimensional electron gas profile and polarization profile in AlGaN/GaN heterostructure.

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2015

View Preview

Info:

Periodical:

Materials Science Forum (Volume 858)

Pages:

1182-1185

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.858.1182

Citation:

Cite this paper

Online since:

May 2016

Authors:

Kotaro Hirose, Norimichi Chinone, Yasuo Cho*

Keywords:

2D Electron Gas, AlGaN/GaN, Scanning Nonlinear Dielectric Microscopy

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

* - Corresponding Author

References

[1] Y. Cho, A. Kirihara, and T. Saeki, Rev. Sci. Instrum., 67(1996) 2297–2303.

Google Scholar

[2] O. Ambacher, J. Smart, J. R. Shealy, N. G. Weimann, K. Chu, M. Murphy, W. J. Schaff, L. F. Eastman, R. Dimitrov, L. Wittmer, M. Stutzmann, W. Rieger, and J. Hilsenbeck, J. Appl. Phys., 85 (1999) 3222-3233.

DOI: 10.1063/1.369664

Google Scholar