HVPE GaN Growth on 4H SiC and Die Dicing

Alexander Usikov; Sergey Kurin; Iosif Barash; Alexander D. Roenkov; Andrei Antipov; Oleg Khait; Oleg Medvedev; Heikki Helava; Yuri Makarov

doi:10.4028/www.scientific.net/MSF.858.1198

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HomeMaterials Science ForumMaterials Science Forum Vol. 858HVPE GaN Growth on 4H SiC and Die Dicing

HVPE GaN Growth on 4H SiC and Die Dicing

Abstract:

Hydride Vapor Phase Epitaxy (HVPE) was used to grow 1-4 μm thick undoped GaN layers on 4H-SiC and sapphire substrates. To adjust mechanical strain and crack formation in the GaN/SiC samples, the AlGaN-based buffer layer was grown at low temperature (920-980°C) and the GaN layer was grown at a higher temperature (1000-1040°C). Laser scribing through the GaN layer or the SiC substrate was applied to fabricate dies from the GaN/SiC and GaN/sapphire samples. The laser irradiation passing through the GaN layer to the sapphire substrate or through the SiC substrate to the GaN layer, along two orthogonal directions created a net of micro-cavities in sapphire and melted grooves in SiC that promote easy breakage of the sample into rectangular dies.

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Materials Science Forum (Volume 858)

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1198-1201

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.858.1198

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Online since:

May 2016

Authors:

Alexander Usikov*, Sergey Kurin, Iosif Barash, Alexander D. Roenkov, Andrei Antipov, Oleg Khait, Oleg Medvedev, Heikki Helava, Yuri Makarov

Keywords:

GaN, Hydride Vapor Phase Epitaxy, Laser Scribing, Sapphire Substrates, Silicon Carbide (SiC)

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