High-Speed Solution Growth of Single Crystal AlN from Cr-Co-Al Solvent

Shota Watanabe; Masashi Nagaya; Yukihisa Takeuchi; Kenta Aoyagi; Shunta Harada; Miho Tagawa; Toru Ujihara

doi:10.4028/www.scientific.net/MSF.858.1210

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Study and Optimization of a 600V Pseudo-Vertical GaN-on-Silicon Rectifier by Finite Element Simulations
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High-Speed Solution Growth of Single Crystal AlN from Cr-Co-Al Solvent
p.1210

HomeMaterials Science ForumMaterials Science Forum Vol. 858High-Speed Solution Growth of Single Crystal AlN...

High-Speed Solution Growth of Single Crystal AlN from Cr-Co-Al Solvent

Abstract:

We achieved a high growth rate in solution growth of AlN single crystal by suppressing unintentional precipitations near the surface of solvent and by increasing the equilibrium nitrogen concentration in the solvent. In order to suppress unintentional precipitations, we made the solvent supersaturated just above the surface of the substrate by optimizing the composition of the solvent and the temperature distribution based on thermodynamic numerical analysis. In particular, we focused on interactions between nitrogen or aluminum and solvent elements, leading to the increase of the equilibrium nitrogen concentration. We selected chromium and cobalt due to their high affinity with nitrogen or aluminum. Consequently, we successfuly achieved growth rate as high as 200 μm/h in maximum.

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Materials Science Forum (Volume 858)

Pages:

1210-1213

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.858.1210

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Online since:

May 2016

Authors:

Shota Watanabe*, Masashi Nagaya, Yukihisa Takeuchi, Kenta Aoyagi, Shunta Harada, Miho Tagawa, Toru Ujihara

Keywords:

AlN, High-Speed Growth, Single Crystal, Solution Growth, Thermodynamic Calculation

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