Study and Optimization of a 600V Pseudo-Vertical GaN-on-Silicon Rectifier by Finite Element Simulations

Amira Souguir-Aouani; Nicolas Thierry-Jebali; Dominique Tournier; Arnaud Yvon; Emmanuel Collard; Dominique Planson

doi:10.4028/www.scientific.net/MSF.858.1190

Paper Titles

Tri-Gate Al_0.2Ga_0.8N/AlN/GaN HEMTs on SiC/Si-Substrates
p.1174

Trapping States in SiO₂/GaN MOS Capacitors Fabricated on Recessed AlGaN/GaN Heterostructures
p.1178

Visualization of Polarization and Two Dimensional Electron Gas Distribution in AlGaN/GaN Heterostructure Using Scanning Nonlinear Dielectric Microscopy
p.1182

15 eV Protons Irradiation of the GaN Schottky Diodes
p.1186

Study and Optimization of a 600V Pseudo-Vertical GaN-on-Silicon Rectifier by Finite Element Simulations
p.1190

Growth of Crack-Free GaN on Si HEMTs with Fe-Doped GaN Using Un-Doped GaN Interlayer
p.1194

HVPE GaN Growth on 4H SiC and Die Dicing
p.1198

Design and Optimization of AlGaN Solar-Blind Double Heterojunction Ultraviolet Phototransistor
p.1202

AlGaN/SiC Heterojunction Ultraviolet Photodiodes
p.1206

HomeMaterials Science ForumMaterials Science Forum Vol. 858Study and Optimization of a 600V Pseudo-Vertical...

Study and Optimization of a 600V Pseudo-Vertical GaN-on-Silicon Rectifier by Finite Element Simulations

Abstract:

This work presents the impact analysis of physical and geometrical parameters on the on-resistance and the breakdown voltage in order to optimize a 600 V pseudo-vertical GaN/Si Schottky rectifier. The results by finite element simulations indicate that the most influent parameter on the resistance is the thickness of the n⁺ layer. Regarding reverse specifications, simulations show that a good efficiency of the “Mesa + Guard Ring” is achieved for a guard ring doping concentration higher than N_a=5×10¹⁷ cm^-³.

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Materials Science Forum (Volume 858)

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1190-1193

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.858.1190

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Online since:

May 2016

Authors:

Amira Souguir-Aouani, Nicolas Thierry-Jebali, Dominique Tournier, Arnaud Yvon, Emmanuel Collard, Dominique Planson*

Keywords:

Finite Element Simulation, GaN on Si, GaN Rectifier

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References

[1] W. Saito, I. Omura, T. Ogura, H. Ohashi. Sol. State Elec. 48 (2004) 1555–1562.

Google Scholar

[2] P. B. Klein S. C. Binari, K. Ikossi, A. E. Wickenden, D. D Koleske, R. L. Henry. App. Phys. Lett. 79(21) (2001) 3527-3529.

DOI: 10.1063/1.1418452

Google Scholar

[3] G. Meneghesso, G. Verzellesi, R. Pierobon, F. Rampazzo, A. Chini, U. K Mishra, C. Canali, E. Zanoni. IEEE Trans. Elec. Dev. 51(10) (2004) 1554-1561.

DOI: 10.1109/ted.2004.835025

Google Scholar

[4] N. Kaminski et al. in proceeding of the 2012 International Conference of Integrated Power Electronics System. (2012) 1-11.

Google Scholar

[5] J. Ladroue, A. Meritan, M. Boufnichel, P. Lefaucheux, P. Ranson, R. Dussart. J. of Vac. Sci. & Tech. A. 28(5) (2010) 1226-1233.

DOI: 10.1116/1.3478674

Google Scholar

[6] D. Alquier, F. Cayrel, O. Menard, A.E. Bazin, A. Yvon and E. Collard Jap. J. of App. Phys. 51 (2012) 01AG08.

DOI: 10.1143/jjap.51.01ag08

Google Scholar

[7] N. Thierry-Jebali, O. Menard, R. Chiriac, E. Collard, C. Brylinski, F. Cayrel, D. Alquier. Phys Stat. Sol. (c). 8(2) 2011, 447-449.

DOI: 10.1002/pssc.201000597

Google Scholar

[8] F. Cayrel, O. Menard, A. Yvon, N. Thierry-Jebali, C. Brylinski, E. Collard, D. Alquier, Phys. Stat. Sol. (a). 209(6) 2012 1059-1066.

Google Scholar

[9] J. D. Greenlee, B. N. Feigelson, T. J. Anderson, et al. J. of App. Phys. 116, (2014) 063502.

Google Scholar