Growth of Crack-Free GaN on Si HEMTs with Fe-Doped GaN Using Un-Doped GaN Interlayer

Atsushi Era; Susumu Hatakenaka; Hiroyuki Okazaki; Yoshitaka Kamo; Takehiro Nishida; Hiroshi Watanabe

doi:10.4028/www.scientific.net/MSF.858.1194

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HomeMaterials Science ForumMaterials Science Forum Vol. 858Growth of Crack-Free GaN on Si HEMTs with Fe-Doped...

Growth of Crack-Free GaN on Si HEMTs with Fe-Doped GaN Using Un-Doped GaN Interlayer

Abstract:

We show the influence of Fe-doping upon bowing and cracking in GaN-on-Si based high-electron-mobility transistors (HEMTs) and report how to prevent from bowing and cracking. In-situ reflectance measurements revealed that stress relaxation occurred during the growth of GaN:Fe on Al_0.25Ga_0.75N, resulting in the wafer bowing and cracking. In-situ measurements and transmission electron microscope images showed that the relaxation was caused by the 3D growth of GaN:Fe and the propagation of threading dislocations. To suppress the relaxation, a 100 nm-thick un-doped GaN interlayer was inserted between GaN:Fe and Al_0.25Ga_0.75N. As a result, a crack-free low-bow surface was obtained for GaN-on-Si HEMTs with GaN:Fe.

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Materials Science Forum (Volume 858)

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1194-1197

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.858.1194

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Online since:

May 2016

Authors:

Atsushi Era*, Susumu Hatakenaka, Hiroyuki Okazaki, Yoshitaka Kamo, Takehiro Nishida, Hiroshi Watanabe

Keywords:

Fe-Doped, GaN, GaN on Si, HEMT

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