Design and Optimization of AlGaN Solar-Blind Double Heterojunction Ultraviolet Phototransistor

Yun Bai; Hua Jun Shen; Chengzhan Li; Yi Dan Tang; Xin Yu Liu

doi:10.4028/www.scientific.net/MSF.858.1202

Paper Titles

Trapping States in SiO₂/GaN MOS Capacitors Fabricated on Recessed AlGaN/GaN Heterostructures
p.1178

Visualization of Polarization and Two Dimensional Electron Gas Distribution in AlGaN/GaN Heterostructure Using Scanning Nonlinear Dielectric Microscopy
p.1182

15 eV Protons Irradiation of the GaN Schottky Diodes
p.1186

Study and Optimization of a 600V Pseudo-Vertical GaN-on-Silicon Rectifier by Finite Element Simulations
p.1190

Growth of Crack-Free GaN on Si HEMTs with Fe-Doped GaN Using Un-Doped GaN Interlayer
p.1194

HVPE GaN Growth on 4H SiC and Die Dicing
p.1198

Design and Optimization of AlGaN Solar-Blind Double Heterojunction Ultraviolet Phototransistor
p.1202

AlGaN/SiC Heterojunction Ultraviolet Photodiodes
p.1206

High-Speed Solution Growth of Single Crystal AlN from Cr-Co-Al Solvent
p.1210

HomeMaterials Science ForumMaterials Science Forum Vol. 858Design and Optimization of AlGaN Solar-Blind...

Design and Optimization of AlGaN Solar-Blind Double Heterojunction Ultraviolet Phototransistor

Abstract:

The n-p-i-n AlGaN solar-blind ultraviolet double heterojunction phototransistor (DHPT) with internal gain is proposed and optimized in this paper. The dependences of spectral responsivity and quantum gain on structure parameters of the AlGaN DHPT are simulated in detail. Then, the polarization effect of AlGaN heterojunction on the performance of AlGaN DHPT is also investigated. Results show that positive polarization charge would enhance the photoresponse of the device, whereas the negative polarization charge would reduce the photoresponse significantly. The reasons for the polarization effect on performance of AlGaN DHPT are discussed.

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2015

View Preview

Info:

Periodical:

Materials Science Forum (Volume 858)

Pages:

1202-1205

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.858.1202

Citation:

Cite this paper

Online since:

May 2016

Authors:

Yun Bai*, Hua Jun Shen, Chengzhan Li, Yi Dan Tang, Xin Yu Liu

Keywords:

AlGaN, Phototransistor, Polarization Effect, Solar-Blind, UV Detector

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

* - Corresponding Author

References

[1] R. M. Clintock, A. Yasan, K. Minder, P. Kung, and M. Razeghia, Avalanche multiplication in AlGaN based solar-blind photodetectors, Appl. Phys. Lett., 87 (2005) 241123-1-241123-3.

DOI: 10.1063/1.2140610

Google Scholar

[2] T. Tut, T. Yelboga, E. Ulker, and E. Ozbay, Solar-blind AlGaN-based p-i-n photodetectors with high breakdown voltage and detectivity, Appl. Phys. Lett., 92 (2008) 103502-1-103502-3.

DOI: 10.1063/1.2895643

Google Scholar

[3] W. Yang, T. Nohava, S. Krishnankutty, R. Torreano, S. McPherson, and H. Marsh, High gain GaN/AlGaN heterojunction phototransistor, Appl. Phys. Lett., 73 (1998) 978-980.

DOI: 10.1063/1.122058

Google Scholar

[4] M. L. Lee, J. K. Sheu, and Y. R. Shu, Ultraviolet bandpass Al0. 17Ga0. 83N/GaN heterojunction phototransistors with high optical gain and high rejection ratio, Appl. Phys. Lett., 92 (2008) 053506-1-053506-3.

DOI: 10.1063/1.2838307

Google Scholar

[5] Atlas User's Manual, Silvaco, Inc., may, (2013).

Google Scholar

[6] X. D. Wang, W. D. Hu, X. S. Chen, J. T. Xu, L. Wang, X. Y. Li, and W. Lu, "Dependence of dark current and photoresponse characteristics on polarization charge density for GaN-based avalanche photodiodes, J. Phys. D: Appl. Phys., 44 (2011) 405102.

DOI: 10.1088/0022-3727/44/40/405102

Google Scholar