Dielectric Performance of (Pb_1-xSr_x)Nb₂O₆-NaNbO₃ Thin Film Materials System: Substitution Effects

Abstract:

(Pb_1-xSr_x)Nb₂O₆-NaNbO₃ (PSNN) dielectric thin films, x changed from 0.4 to 0.6, were deposited by pulsed laser deposition (PLD) technology on p⁺-Si substrate. Post-annealing was performed on the dielectric thin films at 800^oC in oxygen atmosphere for 10 minutes. The Sr-composition dependence of the dielectric performance in this thin film materials system was investigated. The results indicated that dielectric constant changing with Sr-composition in the PSNN thin films showed the shape of a parabola, resulting from the morphotropic phase boundary (MPB) effect caused by the existence of both orthorhombic and tetragonal tungsten bronze phases. The maximized dielectric constant of PSNN was 58 and the leakage current density was about 2.485×10^-9 A·cm^-2 by calculated at-1 V in 1 kHz. The breakdown field strength reached 220 kV/mm of the developed PSNN thin film system, which is promising in energy storage systems application.

• Periodical: Materials Science Forum (Volume 898)
• Pages: 1699-1704
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.898.1699
• Online since: June 2017
• Authors: Fei Hu Tan, Hong Bin Zhao, Qing Meng Zhang, Feng Wei, Jun Du*
• Keywords: (PbSr)Nb₂O₆-NaNbO₃ Thin Film, Dielectric Property, Film Capacitors, Pulsed Laser Deposition

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