[1]
R.J. Asaro and W.A. Tiller, Interface morphology development during stress corrosion cracking: Part I. Via surface diffusion. Metall. Trans, 1972, 3, 1789 -1796.
DOI: 10.1007/bf02642562
Google Scholar
[2]
M.A. Grinfeld, Instability of the separation boundry between a nonhydrostatically stressed elastic body and a melt, Sov. Phys. Dokl. 1986, 31, 831.
Google Scholar
[3]
Y.U. Wang, Y.M. Jin, and A.G. Khachaturyan, Phase field micro-elasticity modeling of surface instability of heteroepitaxial thin films, Acta. Mater. 2004, 52, 81-92.
DOI: 10.1016/j.actamat.2003.08.027
Google Scholar
[4]
D.J. Seol, S.Y. Hu, Z.K. Liu, L.Q. Chen, S.G. Kim, and K.H. Oh, Phase-field modeling of stress-induced surface instabilities in heteroepitaxial thin films, J. Appl. Phys. 2005, 98, 1789.
DOI: 10.1063/1.1996856
Google Scholar
[5]
Y. Ni, L.H. He, and A.K. Soh, Three-dimensional phase field simulation for surface roughening of heteroepitaxial films with elastic anisotropy, J. Cryst. Growth. 2005,284, 281-292.
DOI: 10.1016/j.jcrysgro.2005.07.026
Google Scholar
[6]
T. Takaki, T. Hirouchi, and Y. Tomita, Phase-field study of interface energy effect on quantum dot morphology, J. Cryst. Growth. 2008,310, 2248-2253.
DOI: 10.1016/j.jcrysgro.2007.11.065
Google Scholar
[7]
K. R. Elder, N. Provatas, J. Berry, P. Stefanovic, and M. Grant, Phase-field crystal modeling and classical density functional theory of freezing, Phys. Rev. B. 2007, 75, 794-802.
DOI: 10.1103/physrevb.75.064107
Google Scholar
[8]
P. Wu, F. Gao, and G. Li, Effects of buffer layer thickness on the surface roughness of In0.3Ga0.7As thin films, A phase-field simulation, J. Mater. Res. 2013, 28, 3218-3225.
DOI: 10.1557/jmr.2013.320
Google Scholar
[9]
S.R. Kurtz, D. Myers, and J.M. Olson, Projected performance of three- and four-junction devices using GaAs and GaInP, In Photovoltaic Specialists Conference, 1997; Conference Record of the Twenty-Sixth IEEE, 1997, p.875–878.
DOI: 10.1109/pvsc.1997.654226
Google Scholar
[10]
D.J. Friedman, J.F. Geisz, A.G. Norman, M.W. Wanlass, and S.R. Kurtz, 0.7-eV GaInAs junction for a GaInP/GaAs/GaInAs(1eV)/GaInAs(0.7eV) four-junction solar cell, 4th World Conference on Photovoltaic Energy Conversion. 2006, 598–602.
DOI: 10.1109/wcpec.2006.279527
Google Scholar
[11]
A.G. Khachaturyan, Theory of Structural Transformations in Solids. Wiley, New York, (1983).
Google Scholar
[12]
L.Q. Chen and J. Shen, Applications of semi-implicit Fourier-spectral method to phase field equations, Comput. Phys. Commun. 1998, 108, 147-158.
DOI: 10.1016/s0010-4655(97)00115-x
Google Scholar
[13]
M. Pelliccione and T.M. Lu, Evolution of Thin Film Morphology Modeling and Simulations. Springer, New York, (2007).
Google Scholar
[14]
S. L. Chuang, Physics of Optoelectronics Devices, Wiley, New York, (1995).
Google Scholar
[15]
S. O. Mariager, S. L. Lauridsen, A. Dohn, N. Bovet, C. B. Sørensen, C. M. Schleputz, P. R. Willmott and R. Feidenhans, High-resolution three-dimensional reciprocal-space mapping of InAs nanowires, J. Appl. Crystallogr., 2009, 42, 369-375.
DOI: 10.1107/s0021889809009145
Google Scholar