Electrophysical and Optical Properties of 4H-SiC UV Detectors Irradiated with Electrons

Evgenia V. Kalinina; Alexander A. Lebedev; Vitalii V. Kozlovski; Vladimir Zabrodski; Anatoly M. Strel'chuk; Irina P. Nikitina

doi:10.4028/www.scientific.net/MSF.963.722

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Electrophysical and Optical Properties of 4H-SiC UV Detectors Irradiated with Electrons
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HomeMaterials Science ForumMaterials Science Forum Vol. 963Electrophysical and Optical Properties of 4H-SiC...

Electrophysical and Optical Properties of 4H-SiC UV Detectors Irradiated with Electrons

Abstract:

Comparative studies of the structural, electrophysical properties and spectral sensitivity of 4H-SiC photodetectors of ultraviolet radiation in the spectral range of 200-400 nm were carried out before and after electron irradiations. Photodetectors with Cr Schottky barriers with thickness of 20 nm and 8 mm diameter were formed on n-4H-SiC CVD epitaxial layers with a thickness of 5 μm and concentration N_d-N_a= (1-4) х10¹⁴ cm^-3. Cr/4H-SiC photodiodes were irradiated by electrons at 0.9 MeV energy with doses (0.2-1) x10¹⁶ cm^-2.

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Periodical:

Materials Science Forum (Volume 963)

Pages:

722-725

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.963.722

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Online since:

July 2019

Authors:

Evgenia V. Kalinina, Alexander A. Lebedev*, Vitalii V. Kozlovski, Vladimir Zabrodski, Anatoly M. Strel'chuk, Irina P. Nikitina

Keywords:

Irradiation, Photodetector, Quantum Efficiency, Radiation Defects, Silicon Carbide

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