Impact of Device Structure on Neutron-Induced Single-Event Effect in SiC MOSFETs

Hiroshi Kono; Teruyuki Ohashi; Takao Noda; Kenya Sano

doi:10.4028/www.scientific.net/MSF.963.738

Paper Titles

Electrophysical and Optical Properties of 4H-SiC UV Detectors Irradiated with Electrons
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Direct Bonding of 4H-SiC and SOI Wafers for Radiation-Hardened Image Sensors
p.726

Dependence of the Carrier Removal Rate in 4H-SiC PN Structures on the Irradiation Temperature
p.730

Change in the Parameters of Electron-Irradiated 4H-SiC Schottky Diodes as a Function of the Time during Low-Temperature Isothermal Annealing
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Impact of Device Structure on Neutron-Induced Single-Event Effect in SiC MOSFETs
p.738

Gate Oxide Reliability of SiC MOSFETs and Capacitors Fabricated on 150mm Wafers
p.745

Novel Method for Evaluation of Negative Bias Temperature Instability of SiC MOSFETs
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1200 V SiC MOSFETs with Stable V_TH under High Temperature Gate Bias Stress
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Influence of High-Temperature Bias Stress on Room-Temperature V_T Drift Measurements in SiC Power MOSFETs
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HomeMaterials Science ForumMaterials Science Forum Vol. 963Impact of Device Structure on Neutron-Induced...

Impact of Device Structure on Neutron-Induced Single-Event Effect in SiC MOSFETs

Abstract:

Neutron single event effect (SEE) tolerance of SiC power MOSFETs with different drift region design were evaluated. The SEE is detected over the SEE threshold voltage (V_SEE). The failure rate increases exponentially as the drain voltage increases above V_SEE. The device with higher avalanche breakdown voltage has higher SEE threshold voltage. The neutron SEE tolerance of MOSFETs and PiN diodes of the same epitaxial structure were also evaluated. There was no significant difference in the neutron SEE tolerance of these devices.

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Periodical:

Materials Science Forum (Volume 963)

Pages:

738-741

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.963.738

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Online since:

July 2019

Authors:

Hiroshi Kono*, Teruyuki Ohashi, Takao Noda, Kenya Sano

Keywords:

Long Term DC Stability, Silicon Carbide MOSFET, Single Event Burnout, Single Event Effect

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