1200 V SiC MOSFETs with Stable VTH under High Temperature Gate Bias Stress

Jimmy Franchi; Martin Domeij; Kwang Won Lee

doi:10.4028/www.scientific.net/MSF.963.753

Paper Titles

Change in the Parameters of Electron-Irradiated 4H-SiC Schottky Diodes as a Function of the Time during Low-Temperature Isothermal Annealing
p.734

Impact of Device Structure on Neutron-Induced Single-Event Effect in SiC MOSFETs
p.738

Gate Oxide Reliability of SiC MOSFETs and Capacitors Fabricated on 150mm Wafers
p.745

Novel Method for Evaluation of Negative Bias Temperature Instability of SiC MOSFETs
p.749

1200 V SiC MOSFETs with Stable V_TH under High Temperature Gate Bias Stress
p.753

Influence of High-Temperature Bias Stress on Room-Temperature V_T Drift Measurements in SiC Power MOSFETs
p.757

Design Considerations for Robust Manufacturing and High Yield of 1.2 kV 4H-SiC VDMOS Transistors
p.763

Dynamic Characterization and Robustness Test of High Voltage SiC MOSFETs
p.768

Avalanche Ruggedness Characterization of 10 kV 4H-SiC MOSFETs
p.773

HomeMaterials Science ForumMaterials Science Forum Vol. 9631200 V SiC MOSFETs with Stable VTH under High...

1200 V SiC MOSFETs with Stable V_TH under High Temperature Gate Bias Stress

Abstract:

In this work, threshold voltage drift of SiC MOSFET devices have been investigated. The drift during positive gate bias application was found to be moderate for three commercial grade devices, while the results for negative gate bias application differ widely. We demonstrate ON Semiconductor SiC MOSFETs with threshold voltage stability under both positive and negative bias stress due to an improved gate oxide process, and the influence of high field stress on the threshold voltage is additionally discussed. A long term transient high temperature gate bias stress is shown to cause a slight positive shift in the threshold voltage of the ON Semiconductor devices, while the on resistance remains constant.