Design Considerations for Robust Manufacturing and High Yield of 1.2 kV 4H-SiC VDMOS Transistors

Holger Schlichting; Tomasz Sledziewski; Anton J. Bauer; Tobias Erlbacher

doi:10.4028/www.scientific.net/MSF.963.763

Paper Titles

Gate Oxide Reliability of SiC MOSFETs and Capacitors Fabricated on 150mm Wafers
p.745

Novel Method for Evaluation of Negative Bias Temperature Instability of SiC MOSFETs
p.749

1200 V SiC MOSFETs with Stable V_TH under High Temperature Gate Bias Stress
p.753

Influence of High-Temperature Bias Stress on Room-Temperature V_T Drift Measurements in SiC Power MOSFETs
p.757

Design Considerations for Robust Manufacturing and High Yield of 1.2 kV 4H-SiC VDMOS Transistors
p.763

Dynamic Characterization and Robustness Test of High Voltage SiC MOSFETs
p.768

Avalanche Ruggedness Characterization of 10 kV 4H-SiC MOSFETs
p.773

Avalanche Robustness of 4600 V SiC DMOSFETs
p.777

Reliability and Ruggedness of Planar Silicon Carbide MOSFETs
p.782

HomeMaterials Science ForumMaterials Science Forum Vol. 963Design Considerations for Robust Manufacturing and...

Design Considerations for Robust Manufacturing and High Yield of 1.2 kV 4H-SiC VDMOS Transistors

Abstract:

Production yield is a major factor for semiconductor device manufacturing. To produce high performance devices cost efficiently, it is important to know the process windows of the implemented production technology. This can influence the yield in different ways. One of the critical steps is the photolithography. In this work the impact of misalignment within the technological limits is analyzed and discussed. 4H-SiC VDMOS Transistors were produced and the electrical characteristics were compared with the overlay accuracy of the devices. Small change in channel length can lead to large impact on the electrical characteristic. Especially when the channel length reaches values near to the critical length for short channel effects (SCEs), small overlay inaccuracies influence the electrical characteristic of the devices in an increasing manner. Different cell designs were analyzed regarding their robustness to misalignment.