Avalanche Ruggedness Characterization of 10 kV 4H-SiC MOSFETs

Ashish Kumar; Sanket Parashar; Edward van Brunt; Shadi Sabri; Satyaki Ganguly; Subhashish Bhattacharya; Victor Veliadis

doi:10.4028/www.scientific.net/MSF.963.773

Paper Titles

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Dynamic Characterization and Robustness Test of High Voltage SiC MOSFETs
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HomeMaterials Science ForumMaterials Science Forum Vol. 963Avalanche Ruggedness Characterization of 10 kV...

Avalanche Ruggedness Characterization of 10 kV 4H-SiC MOSFETs

Abstract:

In this paper, single pulse unclamped inductive switching (UIS) test of Wolfspeed Gen-3 10 kV, 15 A 4H-SiC MOSFETs is performed for four operating conditions at room temperature. The avalanche energy is observed to be around 7.0 J. The measured values are in good agreement with expected behavior, which may be extrapolated beyond the experimentally measured range. Failure analysis was conducted after each device failure to observe the failure locations. Avalanche parameters of SiC MOSFETs with various voltage ratings are compared. The avalanche energy of the Gen-3 10 kV, 15 A 4H-SiC MOSFETs is obtained to be superior to earlier generations of 10 kV SiC MOSFETs.

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Silicon Carbide and Related Materials 2018

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Periodical:

Materials Science Forum (Volume 963)

Pages:

773-776

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.963.773

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Online since:

July 2019

Authors:

Ashish Kumar*, Sanket Parashar, Edward van Brunt, Shadi Sabri, Satyaki Ganguly, Subhashish Bhattacharya, Victor Veliadis

Keywords:

10 kV SiC MOSFET, 4H-SiC MOSFET, Avalanche Ruggedness, Medium Voltage Power Converter, Unclamped Inductive Switching (UIS)

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