Comparative Study on the Repetitive Unclamped-Inductive-Switching Capability(R-UIS) of 1200V 160mOhm SiC Planar Gate MOSFETs

In Hwan Ji; Sauvik Chowdhury; Blake Powell; Kiran Chatty; Sujit Banerjee; Kevin Matocha

doi:10.4028/www.scientific.net/MSF.963.792

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HomeMaterials Science ForumMaterials Science Forum Vol. 963Comparative Study on the Repetitive...

Comparative Study on the Repetitive Unclamped-Inductive-Switching Capability(R-UIS) of 1200V 160mOhm SiC Planar Gate MOSFETs

Abstract:

This paper presents the comparative study on the repetitive unclamped inductive load switching capabilites in comercialized 1200V, 160mΩ rated SiC MOSFETs. Recently released Littelfuse-Monolith 1200V 160 mOhm design (LSIC1MO120E0160) manufactured through 150mm high volume CMOS compatible process demonstrated excellent R-UIS capabilities: no parametric shift on key electrical performances such as on-resistance, threshold voltage, breakdown voltage and drain leakage current after 100000 cycles of R-UIS stress. Both Competitor A and B design with planar gate showed R-UIS capabilities. All critical parameters were within the datasheet specification after R-UIS test. Competitor A design was equivalent to LSIC1MO120E0160. Competitor B design showed the drain leakage increase after 2000 cycle of R-UIS stress. Competitor C design with trench gate did not exhibit any R-UIS capabilities.

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Periodical:

Materials Science Forum (Volume 963)

Pages:

792-796

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.963.792

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Online since:

July 2019

Authors:

In Hwan Ji*, Sauvik Chowdhury, Blake Powell, Kiran Chatty, Sujit Banerjee, Kevin Matocha

Keywords:

Avalanche, LSIC1MO120E0160, Repetitive, Ruggedness, SiC Power MOSFET, Unclamped Inductive Switching (UIS)

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References

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