Capability of SiC MOSFETs under Short-Circuit Tests and Development of a Thermal Model by Finite Element Analysis

Daniela Cavallaro; Mario Pulvirenti; Edoardo Zanetti; Mario Saggio

doi:10.4028/www.scientific.net/MSF.963.788

Paper Titles

Dynamic Characterization and Robustness Test of High Voltage SiC MOSFETs
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Avalanche Ruggedness Characterization of 10 kV 4H-SiC MOSFETs
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Avalanche Robustness of 4600 V SiC DMOSFETs
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Reliability and Ruggedness of Planar Silicon Carbide MOSFETs
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Capability of SiC MOSFETs under Short-Circuit Tests and Development of a Thermal Model by Finite Element Analysis
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Comparative Study on the Repetitive Unclamped-Inductive-Switching Capability(R-UIS) of 1200V 160mOhm SiC Planar Gate MOSFETs
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Superior Short Circuit Performance of 1.2kV SiC JBSFETs Compared to 1.2kV SiC MOSFETs
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Optimization of 1700V SiC MOSFET for Short Circuit Ruggedness
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Industrial and Body Diode Qualification of Gen-III Medium Voltage SiC MOSFETs: Challenges and Solutions
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HomeMaterials Science ForumMaterials Science Forum Vol. 963Capability of SiC MOSFETs under Short-Circuit...

Capability of SiC MOSFETs under Short-Circuit Tests and Development of a Thermal Model by Finite Element Analysis

Abstract:

The aim of this paper is to analyze the SiC MOSFETs behavior under short circuit tests (SCT). In particular, the activity is focused on a deep evaluation of short circuit dynamic by dedicated laboratory measurements conducted at different conditions supported and compared by means of a robust physical model developed by Finite Element Approach.

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Silicon Carbide and Related Materials 2018

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Periodical:

Materials Science Forum (Volume 963)

Pages:

788-791

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.963.788

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Online since:

July 2019

Authors:

Daniela Cavallaro*, Mario Pulvirenti, Edoardo Zanetti, Mario Saggio

Keywords:

Failure Analysis, Gate Oxide Reliability, Short Circuit, SiC MOSFET, Thermal Model

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References

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