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Optimization of 1700V SiC MOSFET for Short Circuit Ruggedness

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Abstract:

This work focuses on the ruggedness aspect of SiC MOSFET technology discussing design advances to maximize SiC device benefits for industrial and transportation power conversion applications. These improvements were studied as a tradeoff between short circuit withstand time (τsc) and device on-state resistance (RDS(on)) at operating temperature (150°C) utilizing 1.7kV MOSFETs fabricated on 2.25x4.5mm2 die. Up to two times improvement in τsc with only 20% of RDS(on) increase was achieved for design with reduced source region doping.

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Silicon Carbide and Related Materials 2018 View Preview

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Periodical:

Materials Science Forum (Volume 963)

Pages:

801-804

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.963.801

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Online since:

July 2019

Authors:

Alexander Bolotnikov*, Peter A. Losee, Reza Ghandi, Adam Halverson, Ljubisa Stevanovic

Keywords:

Ruggedness, Short Circuit, SiC MOSFET

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© 2019 Trans Tech Publications Ltd. All Rights Reserved

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References

[1] A. Bolotnikov et al., APEC, Charlotte, NC, USA, pp.2445-2452 (2015).

Google Scholar

[2] L. Stevanovic et al., APEC, Tampa, FL, USA (2017).

Google Scholar

[3] V. Tilak et al., Mat. Sci. Forum, pp.645-648, 1005 (2009).

Google Scholar

[4] S. Acharya et al., APEC, San Antonio, TX, USA, (2018).

Google Scholar

[5] X. Huang et al., ISPSD, Sapporo, Japan, pp.255-258 (2017).

Google Scholar

[6] H. Hatta et al., Mat. Sci. Forum, pp.727-730 (2017).

Google Scholar

[5] P. Losee et al., U. S. Patent No. 9,899,512 B2 (2018).

Google Scholar

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