Demonstration of 4H-SiC JFET Digital ICs Across 1000°C Temperature Range without Change to Input Voltages

Philip G. Neudeck; David J. Spry; Michael J. Krasowski; Norman F. Prokop; Liang Yu Chen

doi:10.4028/www.scientific.net/MSF.963.813

Paper Titles

Comparative Study on the Repetitive Unclamped-Inductive-Switching Capability(R-UIS) of 1200V 160mOhm SiC Planar Gate MOSFETs
p.792

Superior Short Circuit Performance of 1.2kV SiC JBSFETs Compared to 1.2kV SiC MOSFETs
p.797

Optimization of 1700V SiC MOSFET for Short Circuit Ruggedness
p.801

Industrial and Body Diode Qualification of Gen-III Medium Voltage SiC MOSFETs: Challenges and Solutions
p.805

Demonstration of 4H-SiC JFET Digital ICs Across 1000°C Temperature Range without Change to Input Voltages
p.813

A Monolithic 500°C D-Flip Flop Realized in Bipolar 4H-SiC TTL Technology
p.818

A Study on Fastening the Switching Speed for Wide Bandgap Semiconductor Based Super Cascode
p.823

Improving 5V Digital 4H-SiC CMOS ICs for Operating at 400°C Using PMOS Channel Implantation
p.827

High Temperature High Current Gain IC Compatible 4H-SiC Phototransistor
p.832

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Demonstration of 4H-SiC JFET Digital ICs Across 1000°C Temperature Range without Change to Input Voltages

Abstract:

Operational testing of prototopye 4H-SiC JFET ICs across an unrivaled ambient temperature span in excess of 1000 °C, from-190 °C to +812 °C, has been demonstrated without any change/adjustment of input signal levels or power supply voltages. This unique ability is expected to simplify infusion of this IC technology into a broader range of beneficial applications.