A Study on Fastening the Switching Speed for Wide Bandgap Semiconductor Based Super Cascode

Xiang Guo Wang; Masayuki Yamamoto

doi:10.4028/www.scientific.net/MSF.963.823

Paper Titles

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A Monolithic 500°C D-Flip Flop Realized in Bipolar 4H-SiC TTL Technology
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A Study on Fastening the Switching Speed for Wide Bandgap Semiconductor Based Super Cascode
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Improving 5V Digital 4H-SiC CMOS ICs for Operating at 400°C Using PMOS Channel Implantation
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High Temperature High Current Gain IC Compatible 4H-SiC Phototransistor
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4H-SiC Trench pMOSFETs for High-Frequency CMOS Inverters
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SiC Vertical-Channel n- and p-JFETs Fully Fabricated by Ion Implantation
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HomeMaterials Science ForumMaterials Science Forum Vol. 963A Study on Fastening the Switching Speed for Wide...

A Study on Fastening the Switching Speed for Wide Bandgap Semiconductor Based Super Cascode

Abstract:

The Super Cascode is a series connected structure with a normally-off low voltage Si-MOSFET and multiple normally-on wide bandgap semiconductors. It has low switching losses compared with silicon based bipolar devices, and low on-resistance and low cost compared with other single high voltage normally-off wide bandgap semiconductor devices. In practice, however, there are inevitable parasitic inductances, which result in the increase of switching losses. The method is proposed to eliminate the common-source inductances (CSIs), such as using stack-die configuration with each device and adding an additional inductance in the gate loop of Si-MOSFET. It is numerically shown that the rise and fall times of the proposed method were 33.5% and 7.2% faster than the conventional one, respectively.

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Periodical:

Materials Science Forum (Volume 963)

Pages:

823-826

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.963.823

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Online since:

July 2019

Authors:

Xiang Guo Wang*, Masayuki Yamamoto

Keywords:

Kelvin Connection, Multi-Level Structure, Super Cascode

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