High Temperature High Current Gain IC Compatible 4H-SiC Phototransistor

Shuo Ben Hou; Per Erik Hellström; Carl Mikael Zetterling; Mikael Östling

doi:10.4028/www.scientific.net/MSF.963.832

Paper Titles

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Improving 5V Digital 4H-SiC CMOS ICs for Operating at 400°C Using PMOS Channel Implantation
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4H-SiC Trench pMOSFETs for High-Frequency CMOS Inverters
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HomeMaterials Science ForumMaterials Science Forum Vol. 963High Temperature High Current Gain IC Compatible...

High Temperature High Current Gain IC Compatible 4H-SiC Phototransistor

Abstract:

This paper presents our in-house fabricated 4H-SiC n-p-n phototransistors. The wafer mapping of the phototransistor on two wafers shows a mean maximum forward current gain (β_Fmax) of 100 at 25 °C. The phototransistor with the highest β_Fmax of 113 has been characterized from room temperature to 500 °C. β_Fmax drops to 51 at 400 °C and remains the same at 500 °C. The photocurrent gain of the phototransistor is 3.9 at 25 °C and increases to 14 at 500 °C under the 365 nm UV light with the optical power of 0.31 mW. The processing of the phototransistor is same to our 4H-SiC-based bipolar integrated circuits, so it is a promising candidate for 4H-SiC opto-electronics on-chip integration.

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Periodical:

Materials Science Forum (Volume 963)

Pages:

832-836

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.963.832

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Online since:

July 2019

Authors:

Shuo Ben Hou*, Per Erik Hellström, Carl Mikael Zetterling, Mikael Östling

Keywords:

4H-SiC, High Temperature, Integrated Circuit (IC), Phototransistor

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References

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