Reliability and Ruggedness of Planar Silicon Carbide MOSFETs

Kevin Matocha; In Hwan Ji; Sauvik Chowdhury

doi:10.4028/www.scientific.net/MSF.963.782

Paper Titles

Design Considerations for Robust Manufacturing and High Yield of 1.2 kV 4H-SiC VDMOS Transistors
p.763

Dynamic Characterization and Robustness Test of High Voltage SiC MOSFETs
p.768

Avalanche Ruggedness Characterization of 10 kV 4H-SiC MOSFETs
p.773

Avalanche Robustness of 4600 V SiC DMOSFETs
p.777

Reliability and Ruggedness of Planar Silicon Carbide MOSFETs
p.782

Capability of SiC MOSFETs under Short-Circuit Tests and Development of a Thermal Model by Finite Element Analysis
p.788

Comparative Study on the Repetitive Unclamped-Inductive-Switching Capability(R-UIS) of 1200V 160mOhm SiC Planar Gate MOSFETs
p.792

Superior Short Circuit Performance of 1.2kV SiC JBSFETs Compared to 1.2kV SiC MOSFETs
p.797

Optimization of 1700V SiC MOSFET for Short Circuit Ruggedness
p.801

HomeMaterials Science ForumMaterials Science Forum Vol. 963Reliability and Ruggedness of Planar Silicon...

Reliability and Ruggedness of Planar Silicon Carbide MOSFETs

Abstract:

The reliability and ruggedness of Monolith/Littelfuse planar SiC MOSFETs have been evaluated using constant voltage time-dependent dielectric breakdown for gate oxide wearout predictions, showing estimated > 100 year life at V_GS=+25V and T=175C. Using extended time high-temperature gate bias, we have shown < 250 mV threshold voltage shifts for > 5000 hours under V_GS=+25V and negligible threshold voltage shifts for > 2500 hours under V_GS=-10V, both at T=175C. Under unclamped inductive switching, these 1200V, 80 mOhm SiC MOSFETs survive 1000 mJ of avalanche energy, meeting state-of-art ruggedness for 1200V SiC MOSFETs.

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Materials Science Forum (Volume 963)

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782-787

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https://doi.org/10.4028/www.scientific.net/MSF.963.782

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Online since:

July 2019

Authors:

Kevin Matocha*, In Hwan Ji, Sauvik Chowdhury

Keywords:

MOSFETs, Planar-MOSFET, Reliability, Ruggedness

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