Gate Oxide Reliability of SiC MOSFETs and Capacitors Fabricated on 150mm Wafers

Daniel J. Lichtenwalner; Shadi Sabri; Edward van Brunt; Brett Hull; Satyaki Ganguly; Donald A. Gajewski; Scott Allen; John W. Palmour

doi:10.4028/www.scientific.net/MSF.963.745

Paper Titles

Direct Bonding of 4H-SiC and SOI Wafers for Radiation-Hardened Image Sensors
p.726

Dependence of the Carrier Removal Rate in 4H-SiC PN Structures on the Irradiation Temperature
p.730

Change in the Parameters of Electron-Irradiated 4H-SiC Schottky Diodes as a Function of the Time during Low-Temperature Isothermal Annealing
p.734

Impact of Device Structure on Neutron-Induced Single-Event Effect in SiC MOSFETs
p.738

Gate Oxide Reliability of SiC MOSFETs and Capacitors Fabricated on 150mm Wafers
p.745

Novel Method for Evaluation of Negative Bias Temperature Instability of SiC MOSFETs
p.749

1200 V SiC MOSFETs with Stable V_TH under High Temperature Gate Bias Stress
p.753

Influence of High-Temperature Bias Stress on Room-Temperature V_T Drift Measurements in SiC Power MOSFETs
p.757

Design Considerations for Robust Manufacturing and High Yield of 1.2 kV 4H-SiC VDMOS Transistors
p.763

HomeMaterials Science ForumMaterials Science Forum Vol. 963Gate Oxide Reliability of SiC MOSFETs and...

Gate Oxide Reliability of SiC MOSFETs and Capacitors Fabricated on 150mm Wafers

Abstract:

Gate oxide reliability on silicon carbide MOSFETs and large-area SiC N-type capacitors was studied for devices fabricated on 150mm SiC substrates. Oxide lifetime was measured under accelerated stress conditions using constant-voltage time-dependent dielectric breakdown (TDDB) testing, or ramped-voltage breakdown (RBD) testing. TDDB results from 1200V Gen3 MOSFETs reveal a field acceleration parameter of about 35 nm/V, similar to values reported for SiO₂ on silicon. Temperature-dependent RBD tests of large capacitors from 25°C to 200°C reveal an apparent activation energy of 0.24eV, indicating that oxide lifetime increases as the temperature is decreased, as expected. Using this acceleration parameter and activation energy in the linear field model, the gate oxide lifetime from MOSFET TDDB testing extrapolates to greater than 10⁸ hours at a gate voltage of 15 V_GS at 175°C.

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2018

View Preview

Info:

Periodical:

Materials Science Forum (Volume 963)

Pages:

745-748

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.963.745

Citation:

Cite this paper

Online since:

July 2019

Authors:

Daniel J. Lichtenwalner, Shadi Sabri, Edward van Brunt, Brett Hull, Satyaki Ganguly, Donald A. Gajewski, Scott Allen, John W. Palmour

Keywords:

MOSFET, Oxide Reliability, Silicon Carbide, TDDB

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] D.A. Gajewski, S.H. Ryu, M. Das, B. Hull, J. Young, and J. W. Palmour, Mater. Sci. Forum, Vol. 778–780 (2014) p.967–970.

DOI: 10.4028/www.scientific.net/msf.778-780.967

Google Scholar

[2] Z. Chbili, K.P. Cheung, J.P. Campbell, J. Chbili, M. Lahbabi, D.E. Ioannou, and K. Matocha, Mat. Sci. Forum 858 (2016) pp.615-618.

DOI: 10.4028/www.scientific.net/msf.858.615

Google Scholar

[3] D.J. Lichtenwalner, B. Hull, E. Van Brunt, S. Sabri, D.A. Gajewski, D. Grider, S. Allen, and J.W. Palmour, A. Akturk, and J. McGarrity, IEEE Int. Reliab. Phys. Symp. (IRPS) 2018, 2B.2-1 – 2B.2-6.

DOI: 10.1109/irps.2018.8353544

Google Scholar

[4] J.W. McPherson and H.C. Mogul, J. Appl. Phys., 84 (1998) pp.1513-1523.

Google Scholar

[5] J.S. Suehle, IEEE Trans. Electron Dev. 49 (2002) pp.958-971.

Google Scholar

[6] R.K. Chanana, J. Appl. Phys. 109 (2011) 104508.

Google Scholar

[7] J. Robertson and B. Falabretti, Mat. Sci. and Engineering B 135 (2006) pp.267-271.

Google Scholar

[8] A. Berman, IEEE IRPS Proc. (1981) pp.204-209.

Google Scholar

[9] H.C. Cramer, J.D. Oliver, and R.J. Porter, Proc. 2006 CS MANTECH Conf. pp.91-94.

Google Scholar