Dependence of the Carrier Removal Rate in 4H-SiC PN Structures on the Irradiation Temperature

Alexander A. Lebedev; Klavdia S. Davydovskaya; Vitalii V. Kozlovski; Oleg Korolkov; Natalja Sleptsuk; Jana Toompuu

doi:10.4028/www.scientific.net/MSF.963.730

Paper Titles

First-Principles Study on Photoluminescence Quenching of Divacancy in 4H SiC
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Radiation Effects on 1.7kV Class 4H-SiC Power Devices: Development of Compact Simulation Models
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Electrophysical and Optical Properties of 4H-SiC UV Detectors Irradiated with Electrons
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Direct Bonding of 4H-SiC and SOI Wafers for Radiation-Hardened Image Sensors
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Dependence of the Carrier Removal Rate in 4H-SiC PN Structures on the Irradiation Temperature
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Change in the Parameters of Electron-Irradiated 4H-SiC Schottky Diodes as a Function of the Time during Low-Temperature Isothermal Annealing
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Impact of Device Structure on Neutron-Induced Single-Event Effect in SiC MOSFETs
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Gate Oxide Reliability of SiC MOSFETs and Capacitors Fabricated on 150mm Wafers
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Novel Method for Evaluation of Negative Bias Temperature Instability of SiC MOSFETs
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HomeMaterials Science ForumMaterials Science Forum Vol. 963Dependence of the Carrier Removal Rate in 4H-SiC...

Dependence of the Carrier Removal Rate in 4H-SiC PN Structures on the Irradiation Temperature

Abstract:

The influence of 15 MeV proton irradiation temperatures (room temperature (RT) - 700 ° C) on the processes of defect formation in commercially available 4H-SiC JBS structures has been studied. It has been shown that the carrier removal rate does not depend on the irradiation temperature. At the same time, the irradiation temperature affected on the spectrum of introduced radiation defects. The conclusion about the possible influence of SiC crystal lattice structural defects on the processes of radiation defect formation has been made.

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Periodical:

Materials Science Forum (Volume 963)

Pages:

730-733

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.963.730

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Online since:

July 2019

Authors:

Alexander A. Lebedev*, Klavdia S. Davydovskaya, Vitalii V. Kozlovski, Oleg Korolkov, Natalja Sleptsuk, Jana Toompuu

Keywords:

Carrier Removal Rate, Deep Level Transient Spectroscopy (DLTS), Junction Barrier Schottky (JBS) Diode, Proton Irradiation, Radiation Defects

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References

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