Change in the Parameters of Electron-Irradiated 4H-SiC Schottky Diodes as a Function of the Time during Low-Temperature Isothermal Annealing

Oleg Korolkov; Vitalii V. Kozlovski; Alexander A. Lebedev; Jana Toompuu; Natalja Sleptsuk; Toomas Rang

doi:10.4028/www.scientific.net/MSF.963.734

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HomeMaterials Science ForumMaterials Science Forum Vol. 963Change in the Parameters of Electron-Irradiated...

Change in the Parameters of Electron-Irradiated 4H-SiC Schottky Diodes as a Function of the Time during Low-Temperature Isothermal Annealing

Abstract:

In the present work, the kinetics of low-temperature annealing (400 °C) of 4H-SiC JBS diodes irradiated by electrons with an energy of 0.9 MeV and with a dose of 1E16 cm^-2 was studied. The dynamics of changes in I-V, C-V characteristics, as well as DLTS spectra are shown. In the course of the work, a thermal cycling effect was discovered, i.e., effect of multiple rapid cooling to the temperature of liquid nitrogen and heating of the samples. As a result of thermal cycling, the barrier capacity increases and the on-resistance (Rs) decreases. In the DLTS spectrum, a level of - 0.38 eV appears, absent in the as-irradiated diodes.

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Periodical:

Materials Science Forum (Volume 963)

Pages:

734-737

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.963.734

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Online since:

July 2019

Authors:

Oleg Korolkov*, Vitalii V. Kozlovski, Alexander A. Lebedev, Jana Toompuu, Natalja Sleptsuk, Toomas Rang

Keywords:

Annealing Kinetics, DLTS Spectra, Electron Irradiation, Junction Barrier Schottky (JBS) Diode, Radiation Defects

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