UV Nonvolatile Sensor Using SANOS Capacitor Device

Wen Ching Hsieh; Wei Ting Tseng; Fuh Cheng Jong; Hao Tien Daniel Lee

doi:10.4028/www.scientific.net/MSF.977.250

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HomeMaterials Science ForumMaterials Science Forum Vol. 977UV Nonvolatile Sensor Using SANOS Capacitor Device

UV Nonvolatile Sensor Using SANOS Capacitor Device

Abstract:

The silicon-aluminum oxide-nitride-silicon oxide-silicon (hereafter SANOS) could be candidates for ultra violet total dose (hereafter UV TD) nonvolatile sensors. In the case of SANOS UV TD radiation sensors, the UV radiation induces a significant increase of threshold voltage V_T. The changes of V_T for SANOS after UV radiation have a correlation to the UV TD as well. In this paper, the performance for capacitor types of SANOS UV TD nonvolatile sensor were discussed in detailed. The SANOS capacitor device in this study has demonstrated the better feasibility for UV TD nonvolatile sensor application.

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Periodical:

Materials Science Forum (Volume 977)

Pages:

250-255

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.977.250

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Online since:

February 2020

Authors:

Wen Ching Hsieh*, Wei Ting Tseng, Fuh Cheng Jong, Hao Tien Daniel Lee

Keywords:

Capacity, SANOS, Sensor, UV

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