Electrical Passivation of Silicon Wafers

M. Kunst; Frank Wünsch; O. Abdallah; G. Citarella

doi:10.4028/www.scientific.net/SSP.108-109.327

Paper Titles

Structure Determination of Clusters Formed in Ultra-Low Energy High-Dose Implanted Silicon
p.303

Impact of Hydrogen Implantation on Helium Implantation Induced Defects
p.309

Bulk Radiation Damage Induced in Thin Epitaxial Silicon Detectors by 24 GeV Protons
p.315

Defect Engineering in Ion Beam Synthesis of SiC and SiO₂ in Si
p.321

Electrical Passivation of Silicon Wafers
p.327

Point Defects Interaction with Extended Defects and Impurities and Its Influence on the Si-SiO₂ System Properties
p.333

Magnetic-Field-Induced Modification of Properties of Silicon Lattice Defects
p.339

Phase Transition on Surface of IV Group Semiconductors by Laser Radiation
p.345

Stress - Dependent Out - Annealing of Defects in Self - Implanted Silicon
p.351

HomeSolid State PhenomenaSolid State Phenomena Vols. 108-109Electrical Passivation of Silicon Wafers

Electrical Passivation of Silicon Wafers

Abstract:

Surface passivation in silicon wafers is investigated by contactless photoconductance measurements. It is shown that the deposition of a-Si:H layers on top of c-Si wafers leads to passivation of the c-Si surface. Passivation by Si3N4 of the p c-Si surface is at least partially due to the depletion layer at the interface. The separation of excess charge carriers by the depletion field is responsible for a relatively slowly decaying part of the signal not directly related to bulk recombination. An HF dip is not sufficient for an appropriate passivation of p c-Si but immersion in I2/ethanol solution is promising.