Electrical Passivation of Silicon Wafers

Abstract:

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Surface passivation in silicon wafers is investigated by contactless photoconductance measurements. It is shown that the deposition of a-Si:H layers on top of c-Si wafers leads to passivation of the c-Si surface. Passivation by Si3N4 of the p c-Si surface is at least partially due to the depletion layer at the interface. The separation of excess charge carriers by the depletion field is responsible for a relatively slowly decaying part of the signal not directly related to bulk recombination. An HF dip is not sufficient for an appropriate passivation of p c-Si but immersion in I2/ethanol solution is promising.

Info:

Periodical:

Solid State Phenomena (Volumes 108-109)

Edited by:

B. Pichaud, A. Claverie, D. Alquier, H. Richter and M. Kittler

Pages:

327-332

DOI:

10.4028/www.scientific.net/SSP.108-109.327

Citation:

M. Kunst et al., "Electrical Passivation of Silicon Wafers", Solid State Phenomena, Vols. 108-109, pp. 327-332, 2005

Online since:

December 2005

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Price:

$35.00

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