Point Defects Interaction with Extended Defects and Impurities and Its Influence on the Si-SiO2 System Properties

Daniel Kropman; U. Abru; Tiit Kärner; U. Ugaste; E. Mellikov; M. Kauk; Ivo Heinmaa; A. Samoson; Arthur Medvid

doi:10.4028/www.scientific.net/SSP.108-109.333

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Point Defects Interaction with Extended Defects and Impurities and Its Influence on the Si-SiO₂ System Properties

Abstract:

The type and density of the point defects that are generated in the Si surface layer during thermal oxidation depend on the oxidation condition: temperature, cooling rate, oxidation time, impurity content. The interaction between point defects with extended defects and impurities affect the Si-SiO2 interface properties. The influence of point defects may be diminished and the interface properties improved by an appropriate choice of oxidation conditions.