Point Defects Interaction with Extended Defects and Impurities and Its Influence on the Si-SiO2 System Properties

Abstract:

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The type and density of the point defects that are generated in the Si surface layer during thermal oxidation depend on the oxidation condition: temperature, cooling rate, oxidation time, impurity content. The interaction between point defects with extended defects and impurities affect the Si-SiO2 interface properties. The influence of point defects may be diminished and the interface properties improved by an appropriate choice of oxidation conditions.

Info:

Periodical:

Solid State Phenomena (Volumes 108-109)

Edited by:

B. Pichaud, A. Claverie, D. Alquier, H. Richter and M. Kittler

Pages:

333-338

DOI:

10.4028/www.scientific.net/SSP.108-109.333

Citation:

D. Kropman et al., "Point Defects Interaction with Extended Defects and Impurities and Its Influence on the Si-SiO2 System Properties", Solid State Phenomena, Vols. 108-109, pp. 333-338, 2005

Online since:

December 2005

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Price:

$35.00

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